Enhancement of TFT performance by purification of indium-zinc-tin oxide

Bukke Ravindra Naik; Mude Narendra Naik; Christophe Avis; Jin Jang

doi:10.23919/AM-FPD.2018.8437389

Enhancement of TFT performance by purification of indium-zinc-tin oxide

Bukke Ravindra Naik, Mude Narendra Naik, Christophe Avis, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In the present work, we studied the effect of purification of IZTO precursor on the performance of oxide TFT using high-k ZrO_x gate insulator. The unpurified IZTO TFT showed the saturation mobility (μ_sat) of 2.86 cm²/V, threshold voltage (V_th) of 0.43 V, subthreshold swing (SS) of 112 mV/dec., and a current ratio I_ON/I_OFF of 10⁸. On the other hand, the purified IZTO TFT exhibited the μ_sat of 5.22 cm²/V, V_th of 0.36 V, SS of 90 mV/dec., and an I_ON/I_OFF of 10⁸. The results suggest that the purification of oxide semiconductor precursor is important for high performance TFT.

Original language	English
Title of host publication	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9784990875350
DOIs	https://doi.org/10.23919/AM-FPD.2018.8437389
Publication status	Published - 15 Aug 2018
Event	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan Duration: 3 Jul 2018 → 6 Jul 2018

Publication series

Name	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
Country/Territory	Japan
City	Kyoto
Period	3/07/18 → 6/07/18

Bibliographical note

Publisher Copyright:
© 2018 FTFMD.

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10.23919/AM-FPD.2018.8437389

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Naik, B. R., Naik, M. N., Avis, C., & Jang, J. (2018). Enhancement of TFT performance by purification of indium-zinc-tin oxide. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8437389 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2018.8437389

Naik, Bukke Ravindra ; Naik, Mude Narendra ; Avis, Christophe et al. / Enhancement of TFT performance by purification of indium-zinc-tin oxide. AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

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title = "Enhancement of TFT performance by purification of indium-zinc-tin oxide",

abstract = "In the present work, we studied the effect of purification of IZTO precursor on the performance of oxide TFT using high-k ZrOx gate insulator. The unpurified IZTO TFT showed the saturation mobility (μsat) of 2.86 cm2/V, threshold voltage (Vth) of 0.43 V, subthreshold swing (SS) of 112 mV/dec., and a current ratio ION/IOFF of 108. On the other hand, the purified IZTO TFT exhibited the μsat of 5.22 cm2/V, Vth of 0.36 V, SS of 90 mV/dec., and an ION/IOFF of 108. The results suggest that the purification of oxide semiconductor precursor is important for high performance TFT.",

author = "Naik, {Bukke Ravindra} and Naik, {Mude Narendra} and Christophe Avis and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2018 FTFMD.; 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 ; Conference date: 03-07-2018 Through 06-07-2018",

year = "2018",

month = aug,

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doi = "10.23919/AM-FPD.2018.8437389",

language = "English",

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series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

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Naik, BR, Naik, MN, Avis, C & Jang, J 2018, Enhancement of TFT performance by purification of indium-zinc-tin oxide. in AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8437389, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018, Kyoto, Japan, 3/07/18. https://doi.org/10.23919/AM-FPD.2018.8437389

Enhancement of TFT performance by purification of indium-zinc-tin oxide. / Naik, Bukke Ravindra; Naik, Mude Narendra; Avis, Christophe et al.
AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8437389 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhancement of TFT performance by purification of indium-zinc-tin oxide

AU - Naik, Bukke Ravindra

AU - Naik, Mude Narendra

AU - Avis, Christophe

AU - Jang, Jin

PY - 2018/8/15

Y1 - 2018/8/15

N2 - In the present work, we studied the effect of purification of IZTO precursor on the performance of oxide TFT using high-k ZrOx gate insulator. The unpurified IZTO TFT showed the saturation mobility (μsat) of 2.86 cm2/V, threshold voltage (Vth) of 0.43 V, subthreshold swing (SS) of 112 mV/dec., and a current ratio ION/IOFF of 108. On the other hand, the purified IZTO TFT exhibited the μsat of 5.22 cm2/V, Vth of 0.36 V, SS of 90 mV/dec., and an ION/IOFF of 108. The results suggest that the purification of oxide semiconductor precursor is important for high performance TFT.

AB - In the present work, we studied the effect of purification of IZTO precursor on the performance of oxide TFT using high-k ZrOx gate insulator. The unpurified IZTO TFT showed the saturation mobility (μsat) of 2.86 cm2/V, threshold voltage (Vth) of 0.43 V, subthreshold swing (SS) of 112 mV/dec., and a current ratio ION/IOFF of 108. On the other hand, the purified IZTO TFT exhibited the μsat of 5.22 cm2/V, Vth of 0.36 V, SS of 90 mV/dec., and an ION/IOFF of 108. The results suggest that the purification of oxide semiconductor precursor is important for high performance TFT.

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SN - 9784990875350

T3 - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

BT - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

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Naik BR, Naik MN, Avis C , Jang J. Enhancement of TFT performance by purification of indium-zinc-tin oxide. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8437389. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2018.8437389

Enhancement of TFT performance by purification of indium-zinc-tin oxide

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