Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator

Shinhyuk Yang; Jeong Ik Lee; Sang Hee Ko Park; Woo Seok Cheong; Doo Hee Cho; Sung Min Yoon; Chun Won Byun; Chi Sun Hwang; Hye Yong Chu; Kyoung Ik Cho; Taek Ahn; Yoojeong Choi; Mi Hye Yi; Jin Jang

doi:10.1109/LED.2010.2043334

Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator

Shinhyuk Yang
, Jeong Ik Lee
, Sang Hee Ko Park
, Woo Seok Cheong
, Doo Hee Cho
, Sung Min Yoon
, Chun Won Byun
, Chi Sun Hwang
, Hye Yong Chu
, Kyoung Ik Cho
, Taek Ahn
, Yoojeong Choi
, Mi Hye Yi
, Jin Jang

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm²/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (V _T) of 3.10 V, and an onoff ratio of 3.9 ×⁹. The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.

Original language	English
Article number	5433037
Pages (from-to)	446-448
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	5
DOIs	https://doi.org/10.1109/LED.2010.2043334
Publication status	Published - May 2010

Bibliographical note

Funding Information:
Manuscript received January 10, 2010; revised February 1, 2010. Date of publication March 18, 2010; date of current version April 23, 2010. This work was supported in part by the IT R&D program [2006-S079-05, Smart window with transparent electronic devices] and the 21st century Frontier R&D Program of the Ministry of Knowledge Economy of the Korean government and in part by Project No. SK-0903-02. The review of this letter was arranged by Editor J. K. O. Sin.

Keywords

Oxide
Sputtering
Thin-film transistor (TFT)
Transparent

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10.1109/LED.2010.2043334

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Yang, S., Lee, J. I., Ko Park, S. H., Cheong, W. S., Cho, D. H., Yoon, S. M., Byun, C. W., Hwang, C. S., Chu, H. Y., Cho, K. I., Ahn, T., Choi, Y., Yi, M. H., & Jang, J. (2010). Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator. IEEE Electron Device Letters, 31(5), 446-448. Article 5433037. https://doi.org/10.1109/LED.2010.2043334

@article{c16064b6ab08404ab46466aaa0212a19,

title = "Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator",

abstract = "We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm2/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (V T) of 3.10 V, and an onoff ratio of 3.9 ×9. The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.",

keywords = "Oxide, Sputtering, Thin-film transistor (TFT), Transparent",

author = "Shinhyuk Yang and Lee, \{Jeong Ik\} and \{Ko Park\}, \{Sang Hee\} and Cheong, \{Woo Seok\} and Cho, \{Doo Hee\} and Yoon, \{Sung Min\} and Byun, \{Chun Won\} and Hwang, \{Chi Sun\} and Chu, \{Hye Yong\} and Cho, \{Kyoung Ik\} and Taek Ahn and Yoojeong Choi and Yi, \{Mi Hye\} and Jin Jang",

note = "Funding Information: Manuscript received January 10, 2010; revised February 1, 2010. Date of publication March 18, 2010; date of current version April 23, 2010. This work was supported in part by the IT R\&D program [2006-S079-05, Smart window with transparent electronic devices] and the 21st century Frontier R\&D Program of the Ministry of Knowledge Economy of the Korean government and in part by Project No. SK-0903-02. The review of this letter was arranged by Editor J. K. O. Sin.",

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doi = "10.1109/LED.2010.2043334",

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Yang, S, Lee, JI, Ko Park, SH, Cheong, WS, Cho, DH, Yoon, SM, Byun, CW, Hwang, CS, Chu, HY, Cho, KI, Ahn, T, Choi, Y, Yi, MH & Jang, J 2010, 'Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator', IEEE Electron Device Letters, vol. 31, no. 5, 5433037, pp. 446-448. https://doi.org/10.1109/LED.2010.2043334

TY - JOUR

T1 - Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator

AU - Yang, Shinhyuk

AU - Lee, Jeong Ik

AU - Ko Park, Sang Hee

AU - Cheong, Woo Seok

AU - Cho, Doo Hee

AU - Yoon, Sung Min

AU - Byun, Chun Won

AU - Hwang, Chi Sun

AU - Chu, Hye Yong

AU - Cho, Kyoung Ik

AU - Ahn, Taek

AU - Choi, Yoojeong

AU - Yi, Mi Hye

AU - Jang, Jin

N1 - Funding Information: Manuscript received January 10, 2010; revised February 1, 2010. Date of publication March 18, 2010; date of current version April 23, 2010. This work was supported in part by the IT R&D program [2006-S079-05, Smart window with transparent electronic devices] and the 21st century Frontier R&D Program of the Ministry of Knowledge Economy of the Korean government and in part by Project No. SK-0903-02. The review of this letter was arranged by Editor J. K. O. Sin.

PY - 2010/5

Y1 - 2010/5

N2 - We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm2/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (V T) of 3.10 V, and an onoff ratio of 3.9 ×9. The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.

AB - We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm2/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (V T) of 3.10 V, and an onoff ratio of 3.9 ×9. The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.

KW - Oxide

KW - Sputtering

KW - Thin-film transistor (TFT)

KW - Transparent

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DO - 10.1109/LED.2010.2043334

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SP - 446

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

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ER -

Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator

Abstract

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Keywords

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