Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843)

Jun Gyu Lee; Woo Je Jung; Jae Hyeon Park; Keon Ho Yoo; Tae Whan Kim

doi:10.1109/JEDS.2021.3109400

Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843)

Jun Gyu Lee, Woo Je Jung, Jae Hyeon Park, Keon Ho Yoo, Tae Whan Kim

Research output: Contribution to journal › Comment/debate

Abstract

“We propose optimal etching profiles that can improve the uniformity of the electrical characteristics between cells, and we discuss the reasons for changes in the threshold voltage shift (VT) due to changes in the etching profile.” On p. 776, in the first sentence of the first full paragraph, the space between ‘VT’ should be deleted and is should appear as follows: VT.

Original language	English
Pages (from-to)	813
Number of pages	1
Journal	IEEE Journal of the Electron Devices Society
Volume	9
DOIs	https://doi.org/10.1109/JEDS.2021.3109400
Publication status	Published - 2021

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© 2013 IEEE.

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abstract = "“We propose optimal etching profiles that can improve the uniformity of the electrical characteristics between cells, and we discuss the reasons for changes in the threshold voltage shift (VT) due to changes in the etching profile.” On p. 776, in the first sentence of the first full paragraph, the space between {\textquoteleft}VT{\textquoteright} should be deleted and is should appear as follows: VT.",

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AU - Jung, Woo Je

AU - Park, Jae Hyeon

AU - Yoo, Keon Ho

AU - Kim, Tae Whan

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AB - “We propose optimal etching profiles that can improve the uniformity of the electrical characteristics between cells, and we discuss the reasons for changes in the threshold voltage shift (VT) due to changes in the etching profile.” On p. 776, in the first sentence of the first full paragraph, the space between ‘VT’ should be deleted and is should appear as follows: VT.

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Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843)

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