Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843)

Jun Gyu Lee, Woo Je Jung, Jae Hyeon Park, Keon Ho Yoo, Tae Whan Kim

Research output: Contribution to journalComment/debate

Abstract

“We propose optimal etching profiles that can improve the uniformity of the electrical characteristics between cells, and we discuss the reasons for changes in the threshold voltage shift (VT) due to changes in the etching profile.” On p. 776, in the first sentence of the first full paragraph, the space between ‘VT’ should be deleted and is should appear as follows: VT.

Original languageEnglish
Pages (from-to)813
Number of pages1
JournalIEEE Journal of the Electron Devices Society
Volume9
DOIs
Publication statusPublished - 2021

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