Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843)

Jun Gyu Lee, Woo Je Jung, Jae Hyeon Park, Keon Ho Yoo, Tae Whan Kim

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