Er3+ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere

Jeong Sook Ha; Young Rae Jang; Keon Ho Yoo; Chang Hyun Bae; Sang Hwan Nam; Ji Seon Jeon; Seung Min Park

doi:10.1143/JJAP.43.1541

Er³⁺ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere

Jeong Sook Ha
, Young Rae Jang
, Keon Ho Yoo
, Chang Hyun Bae
, Sang Hwan Nam
, Ji Seon Jeon
, Seung Min Park

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si-Si, SiO_x, and SiO₂) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er³⁺ ions was strongly dependent on the amount of the Si-Si phase in the SRSO:Er films.

Original language	English
Pages (from-to)	1541-1544
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.43.1541
Publication status	Published - Apr 2004

Keywords

1.54μm photoluminescence
Er-doped silicon
Pulsed laser deposition

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10.1143/JJAP.43.1541

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title = "Er3+ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere",

abstract = "We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si-Si, SiOx, and SiO2) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er3+ ions was strongly dependent on the amount of the Si-Si phase in the SRSO:Er films.",

keywords = "1.54μm photoluminescence, Er-doped silicon, Pulsed laser deposition",

author = "Ha, \{Jeong Sook\} and Jang, \{Young Rae\} and Yoo, \{Keon Ho\} and Bae, \{Chang Hyun\} and Nam, \{Sang Hwan\} and Jeon, \{Ji Seon\} and Park, \{Seung Min\}",

year = "2004",

month = apr,

doi = "10.1143/JJAP.43.1541",

language = "English",

volume = "43",

pages = "1541--1544",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "4 A",

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TY - JOUR

T1 - Er3+ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere

AU - Ha, Jeong Sook

AU - Jang, Young Rae

AU - Yoo, Keon Ho

AU - Bae, Chang Hyun

AU - Nam, Sang Hwan

AU - Jeon, Ji Seon

AU - Park, Seung Min

PY - 2004/4

Y1 - 2004/4

N2 - We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si-Si, SiOx, and SiO2) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er3+ ions was strongly dependent on the amount of the Si-Si phase in the SRSO:Er films.

AB - We have developed a new pulsed laser deposition method for fabricating Er-doped silicon-rich silicon oxide (SRSO:Er) films. A target composed of a pure Si disk and an Er metal strip was ablated by a line-focused laser beam in oxygen atmosphere. The oxygen concentration that determines the relative concentrations of the three phases (Si-Si, SiOx, and SiO2) in the film was easily controlled by varying the ambient oxygen pressure. The photoluminescence intensity at 1.54 μm from Er3+ ions was strongly dependent on the amount of the Si-Si phase in the SRSO:Er films.

KW - 1.54μm photoluminescence

KW - Er-doped silicon

KW - Pulsed laser deposition

UR - https://www.scopus.com/pages/publications/3042714508

U2 - 10.1143/JJAP.43.1541

DO - 10.1143/JJAP.43.1541

M3 - Article

AN - SCOPUS:3042714508

SN - 0021-4922

VL - 43

SP - 1541

EP - 1544

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 A

ER -

Er³⁺ photoluminescence from Er-doped silicon-rich silicon oxide films deposited by laser ablation of a Si:Er target in an oxygen atmosphere

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