EUV lighting by the cold cathode C-beam irradiation technique

Bishwa Chandra Adhikari; Sung Tae Yoo; Kyu Chang Park

doi:10.1109/EDTM55494.2023.10102964

EUV lighting by the cold cathode C-beam irradiation technique

Bishwa Chandra Adhikari, Sung Tae Yoo, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

EUV lithography has been introduced for high-volume manufacturing in the semiconductor industry. The recent development of EUV lightings with a wavelength of 13.5 nm has extended semiconductor technology to a node region of several nanometers. The EUV is generated by the C-beam irradiation, which is controlled by the C-beam structure, incident angle of the electron, anode voltage, and anode current.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10102964
Publication status	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

Extreme ultraviolet
Field emission
Vertically aligned carbon nanotube

Access to Document

10.1109/EDTM55494.2023.10102964

Cite this

Adhikari, B. C., Yoo, S. T., & Park, K. C. (2023). EUV lighting by the cold cathode C-beam irradiation technique. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10102964

Adhikari, Bishwa Chandra ; Yoo, Sung Tae ; Park, Kyu Chang. / EUV lighting by the cold cathode C-beam irradiation technique. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{91e92cbfe6ef48ec9194e3ac89416c08,

title = "EUV lighting by the cold cathode C-beam irradiation technique",

abstract = "EUV lithography has been introduced for high-volume manufacturing in the semiconductor industry. The recent development of EUV lightings with a wavelength of 13.5 nm has extended semiconductor technology to a node region of several nanometers. The EUV is generated by the C-beam irradiation, which is controlled by the C-beam structure, incident angle of the electron, anode voltage, and anode current.",

keywords = "Extreme ultraviolet, Field emission, Vertically aligned carbon nanotube",

author = "Adhikari, {Bishwa Chandra} and Yoo, {Sung Tae} and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10102964",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "United States",

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Adhikari, BC, Yoo, ST & Park, KC 2023, EUV lighting by the cold cathode C-beam irradiation technique. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10102964

EUV lighting by the cold cathode C-beam irradiation technique. / Adhikari, Bishwa Chandra; Yoo, Sung Tae; Park, Kyu Chang.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - EUV lighting by the cold cathode C-beam irradiation technique

AU - Adhikari, Bishwa Chandra

AU - Yoo, Sung Tae

AU - Park, Kyu Chang

PY - 2023

Y1 - 2023

N2 - EUV lithography has been introduced for high-volume manufacturing in the semiconductor industry. The recent development of EUV lightings with a wavelength of 13.5 nm has extended semiconductor technology to a node region of several nanometers. The EUV is generated by the C-beam irradiation, which is controlled by the C-beam structure, incident angle of the electron, anode voltage, and anode current.

AB - EUV lithography has been introduced for high-volume manufacturing in the semiconductor industry. The recent development of EUV lightings with a wavelength of 13.5 nm has extended semiconductor technology to a node region of several nanometers. The EUV is generated by the C-beam irradiation, which is controlled by the C-beam structure, incident angle of the electron, anode voltage, and anode current.

KW - Extreme ultraviolet

KW - Field emission

KW - Vertically aligned carbon nanotube

UR - http://www.scopus.com/inward/record.url?scp=85158163905&partnerID=8YFLogxK

U2 - 10.1109/EDTM55494.2023.10102964

DO - 10.1109/EDTM55494.2023.10102964

M3 - Conference contribution

AN - SCOPUS:85158163905

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Adhikari BC, Yoo ST, Park KC. EUV lighting by the cold cathode C-beam irradiation technique. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10102964

EUV lighting by the cold cathode C-beam irradiation technique

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