Abstract
High-resolution lithography is required for ultra-high-resolution pixel of next-generation display devices. For high-resolution lithography, EUV lighting using carbon nanotube (CNT)-based cold cathode electron beam (C-beam) was studied. EUV lighting is affected by C-beam irradiation conditions. In addition, the possibility of high-resolution lithography was confirmed by using polymethyl methacrylate.
| Original language | English |
|---|---|
| Pages (from-to) | 848-849 |
| Number of pages | 2 |
| Journal | Proceedings of the International Display Workshops |
| Volume | 29 |
| Publication status | Published - 2022 |
| Event | 29th International Display Workshops, IDW 2022 - Fukuoka, Japan Duration: 14 Dec 2022 → 16 Dec 2022 |
Bibliographical note
Publisher Copyright:© 2022 ITE and SID.
Keywords
- Carbon nanotube
- Electron emission
- Extreme ultraviolet
- Lighting
- Lithography