EUV Lighting with C-beam Irradiation Technique for Ultra-High-Resolution Devices

Kyu Chang Park; Sung Tae Yoo

EUV Lighting with C-beam Irradiation Technique for Ultra-High-Resolution Devices

Kyu Chang Park
, Sung Tae Yoo

Research output: Contribution to journal › Conference article › peer-review

Abstract

High-resolution lithography is required for ultra-high-resolution pixel of next-generation display devices. For high-resolution lithography, EUV lighting using carbon nanotube (CNT)-based cold cathode electron beam (C-beam) was studied. EUV lighting is affected by C-beam irradiation conditions. In addition, the possibility of high-resolution lithography was confirmed by using polymethyl methacrylate.

Original language	English
Pages (from-to)	848-849
Number of pages	2
Journal	Proceedings of the International Display Workshops
Volume	29
Publication status	Published - 2022
Event	29th International Display Workshops, IDW 2022 - Fukuoka, Japan Duration: 14 Dec 2022 → 16 Dec 2022

Bibliographical note

Publisher Copyright:
© 2022 ITE and SID.

Keywords

Carbon nanotube
Electron emission
Extreme ultraviolet
Lighting
Lithography

Cite this

@article{aab9940e2f4a4e7eb13a0a8e7dbf2908,

title = "EUV Lighting with C-beam Irradiation Technique for Ultra-High-Resolution Devices",

abstract = "High-resolution lithography is required for ultra-high-resolution pixel of next-generation display devices. For high-resolution lithography, EUV lighting using carbon nanotube (CNT)-based cold cathode electron beam (C-beam) was studied. EUV lighting is affected by C-beam irradiation conditions. In addition, the possibility of high-resolution lithography was confirmed by using polymethyl methacrylate.",

keywords = "Carbon nanotube, Electron emission, Extreme ultraviolet, Lighting, Lithography",

author = "Park, \{Kyu Chang\} and Yoo, \{Sung Tae\}",

note = "Publisher Copyright: {\textcopyright} 2022 ITE and SID.; 29th International Display Workshops, IDW 2022 ; Conference date: 14-12-2022 Through 16-12-2022",

year = "2022",

language = "English",

volume = "29",

pages = "848--849",

journal = "Proceedings of the International Display Workshops",

issn = "1883-2490",

publisher = "International Display Workshops",

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TY - JOUR

T1 - EUV Lighting with C-beam Irradiation Technique for Ultra-High-Resolution Devices

AU - Park, Kyu Chang

AU - Yoo, Sung Tae

PY - 2022

Y1 - 2022

N2 - High-resolution lithography is required for ultra-high-resolution pixel of next-generation display devices. For high-resolution lithography, EUV lighting using carbon nanotube (CNT)-based cold cathode electron beam (C-beam) was studied. EUV lighting is affected by C-beam irradiation conditions. In addition, the possibility of high-resolution lithography was confirmed by using polymethyl methacrylate.

AB - High-resolution lithography is required for ultra-high-resolution pixel of next-generation display devices. For high-resolution lithography, EUV lighting using carbon nanotube (CNT)-based cold cathode electron beam (C-beam) was studied. EUV lighting is affected by C-beam irradiation conditions. In addition, the possibility of high-resolution lithography was confirmed by using polymethyl methacrylate.

KW - Carbon nanotube

KW - Electron emission

KW - Extreme ultraviolet

KW - Lighting

KW - Lithography

UR - https://www.scopus.com/pages/publications/85175234040

M3 - Conference article

AN - SCOPUS:85175234040

SN - 1883-2490

VL - 29

SP - 848

EP - 849

JO - Proceedings of the International Display Workshops

JF - Proceedings of the International Display Workshops

T2 - 29th International Display Workshops, IDW 2022

Y2 - 14 December 2022 through 16 December 2022

ER -

EUV Lighting with C-beam Irradiation Technique for Ultra-High-Resolution Devices

Abstract

Bibliographical note

Keywords

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