Fabrication and characterization of low-temperature poly-silicon lateral p-i-n diode

Se Hwan Kim; Seung Hoon Lee; Jin Jang

doi:10.1109/LED.2010.2043047

Fabrication and characterization of low-temperature poly-silicon lateral p-i-n diode

Se Hwan Kim
, Seung Hoon Lee
, Jin Jang

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We have studied a lateral p-i-n photodiode made of excimer-laser-annealed poly-Si on glass. The diode quality factor, activation energy of diode currents at-3 V, and built-in potential were found to be 1.6, 0.5 eV, and 0.89 eV, respectively, which were achieved from temperature-dependent currentvoltage characteristics. The 50-nm-thick p-i-n diode shows a high rectification ratio of 10⁷ at ±1 V and a relatively high photoresponse at 500 lx. PACS: 81.05.Gc; 62.20.-x; 07.10.Lw; 07.10.Pz.

Original language	English
Article number	5433035
Pages (from-to)	443-445
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	5
DOIs	https://doi.org/10.1109/LED.2010.2043047
Publication status	Published - May 2010

Bibliographical note

Funding Information:
Manuscript received December 2, 2009; revised January 19, 2010. Date of publication March 18, 2010; date of current version April 23, 2010. This work was supported by the Korea Science and Engineering Foundation through the Nano Technology Development Program under Grant 2007-02775. The review of this letter was arranged by Editor W. T. Ng.

Keywords

Diode quality factor
Lateral p-i-n diode
Saturation current density

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10.1109/LED.2010.2043047

Cite this

@article{dd8dc873178d493d9354065222f865e5,

title = "Fabrication and characterization of low-temperature poly-silicon lateral p-i-n diode",

abstract = "We have studied a lateral p-i-n photodiode made of excimer-laser-annealed poly-Si on glass. The diode quality factor, activation energy of diode currents at-3 V, and built-in potential were found to be 1.6, 0.5 eV, and 0.89 eV, respectively, which were achieved from temperature-dependent currentvoltage characteristics. The 50-nm-thick p-i-n diode shows a high rectification ratio of 107 at ±1 V and a relatively high photoresponse at 500 lx. PACS: 81.05.Gc; 62.20.-x; 07.10.Lw; 07.10.Pz.",

keywords = "Diode quality factor, Lateral p-i-n diode, Saturation current density",

author = "Kim, \{Se Hwan\} and Lee, \{Seung Hoon\} and Jin Jang",

note = "Funding Information: Manuscript received December 2, 2009; revised January 19, 2010. Date of publication March 18, 2010; date of current version April 23, 2010. This work was supported by the Korea Science and Engineering Foundation through the Nano Technology Development Program under Grant 2007-02775. The review of this letter was arranged by Editor W. T. Ng.",

year = "2010",

month = may,

doi = "10.1109/LED.2010.2043047",

language = "English",

volume = "31",

pages = "443--445",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Fabrication and characterization of low-temperature poly-silicon lateral p-i-n diode

AU - Kim, Se Hwan

AU - Lee, Seung Hoon

AU - Jang, Jin

N1 - Funding Information: Manuscript received December 2, 2009; revised January 19, 2010. Date of publication March 18, 2010; date of current version April 23, 2010. This work was supported by the Korea Science and Engineering Foundation through the Nano Technology Development Program under Grant 2007-02775. The review of this letter was arranged by Editor W. T. Ng.

PY - 2010/5

Y1 - 2010/5

N2 - We have studied a lateral p-i-n photodiode made of excimer-laser-annealed poly-Si on glass. The diode quality factor, activation energy of diode currents at-3 V, and built-in potential were found to be 1.6, 0.5 eV, and 0.89 eV, respectively, which were achieved from temperature-dependent currentvoltage characteristics. The 50-nm-thick p-i-n diode shows a high rectification ratio of 107 at ±1 V and a relatively high photoresponse at 500 lx. PACS: 81.05.Gc; 62.20.-x; 07.10.Lw; 07.10.Pz.

AB - We have studied a lateral p-i-n photodiode made of excimer-laser-annealed poly-Si on glass. The diode quality factor, activation energy of diode currents at-3 V, and built-in potential were found to be 1.6, 0.5 eV, and 0.89 eV, respectively, which were achieved from temperature-dependent currentvoltage characteristics. The 50-nm-thick p-i-n diode shows a high rectification ratio of 107 at ±1 V and a relatively high photoresponse at 500 lx. PACS: 81.05.Gc; 62.20.-x; 07.10.Lw; 07.10.Pz.

KW - Diode quality factor

KW - Lateral p-i-n diode

KW - Saturation current density

UR - https://www.scopus.com/pages/publications/77951880057

U2 - 10.1109/LED.2010.2043047

DO - 10.1109/LED.2010.2043047

M3 - Article

AN - SCOPUS:77951880057

SN - 0741-3106

VL - 31

SP - 443

EP - 445

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 5433035

ER -

Fabrication and characterization of low-temperature poly-silicon lateral p-i-n diode

Abstract

Bibliographical note

Keywords

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