Fabrication and estimation of characteristics for Nb-silicide FEAs

Jae Seok Park; Sanjo Lee; Byeong Kwon Ju; Jin Jang; D. Jeon; Myung Hwan Oh

doi:10.1109/ASID.1999.762711

Fabrication and estimation of characteristics for Nb-silicide FEAs

Jae Seok Park, Sanjo Lee, Byeong Kwon Ju, Jin Jang, D. Jeon, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Electron emission currents and stability in the silicon-Tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-Tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%.

Original language	English
Title of host publication	Proceedings of the 5th Asian Symposium on Information Display, ASID 1999
Editors	Han-Ping D. Shieh, I-Wei Wu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-52
Number of pages	4
ISBN (Electronic)	9579734798, 9789579734790
DOIs	https://doi.org/10.1109/ASID.1999.762711
Publication status	Published - 1999
Event	5th Asian Symposium on Information Display, ASID 1999 - Hsinchu, Taiwan, Province of China Duration: 17 Mar 1999 → 19 Mar 1999

Publication series

Name	Proceedings of the 5th Asian Symposium on Information Display, ASID 1999

Conference

Conference	5th Asian Symposium on Information Display, ASID 1999
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	17/03/99 → 19/03/99

Bibliographical note

Publisher Copyright:
© 1999 SID Taipei Chapter.

Keywords

Field Emission Arrays(FEAs)
Nb(Niobium)-Silicide.
Silicon-Tip

Access to Document

10.1109/ASID.1999.762711

Cite this

Park, J. S., Lee, S., Ju, B. K., Jang, J., Jeon, D., & Oh, M. H. (1999). Fabrication and estimation of characteristics for Nb-silicide FEAs. In H.-P. D. Shieh, & I.-W. Wu (Eds.), Proceedings of the 5th Asian Symposium on Information Display, ASID 1999 (pp. 49-52). Article 762711 (Proceedings of the 5th Asian Symposium on Information Display, ASID 1999). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASID.1999.762711

Park, Jae Seok ; Lee, Sanjo ; Ju, Byeong Kwon et al. / Fabrication and estimation of characteristics for Nb-silicide FEAs. Proceedings of the 5th Asian Symposium on Information Display, ASID 1999. editor / Han-Ping D. Shieh ; I-Wei Wu. Institute of Electrical and Electronics Engineers Inc., 1999. pp. 49-52 (Proceedings of the 5th Asian Symposium on Information Display, ASID 1999).

@inproceedings{570ab1e0916842918945cf3a781db425,

title = "Fabrication and estimation of characteristics for Nb-silicide FEAs",

abstract = "Electron emission currents and stability in the silicon-Tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-Tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%.",

keywords = "Field Emission Arrays(FEAs), Nb(Niobium)-Silicide., Silicon-Tip",

author = "Park, {Jae Seok} and Sanjo Lee and Ju, {Byeong Kwon} and Jin Jang and D. Jeon and Oh, {Myung Hwan}",

note = "Publisher Copyright: {\textcopyright} 1999 SID Taipei Chapter.; 5th Asian Symposium on Information Display, ASID 1999 ; Conference date: 17-03-1999 Through 19-03-1999",

year = "1999",

doi = "10.1109/ASID.1999.762711",

language = "English",

series = "Proceedings of the 5th Asian Symposium on Information Display, ASID 1999",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "49--52",

editor = "Shieh, {Han-Ping D.} and I-Wei Wu",

booktitle = "Proceedings of the 5th Asian Symposium on Information Display, ASID 1999",

address = "United States",

}

Park, JS, Lee, S, Ju, BK, Jang, J, Jeon, D & Oh, MH 1999, Fabrication and estimation of characteristics for Nb-silicide FEAs. in H-PD Shieh & I-W Wu (eds), Proceedings of the 5th Asian Symposium on Information Display, ASID 1999., 762711, Proceedings of the 5th Asian Symposium on Information Display, ASID 1999, Institute of Electrical and Electronics Engineers Inc., pp. 49-52, 5th Asian Symposium on Information Display, ASID 1999, Hsinchu, Taiwan, Province of China, 17/03/99. https://doi.org/10.1109/ASID.1999.762711

Fabrication and estimation of characteristics for Nb-silicide FEAs. / Park, Jae Seok; Lee, Sanjo; Ju, Byeong Kwon et al.
Proceedings of the 5th Asian Symposium on Information Display, ASID 1999. ed. / Han-Ping D. Shieh; I-Wei Wu. Institute of Electrical and Electronics Engineers Inc., 1999. p. 49-52 762711 (Proceedings of the 5th Asian Symposium on Information Display, ASID 1999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication and estimation of characteristics for Nb-silicide FEAs

AU - Park, Jae Seok

AU - Lee, Sanjo

AU - Ju, Byeong Kwon

AU - Jang, Jin

AU - Jeon, D.

AU - Oh, Myung Hwan

PY - 1999

Y1 - 1999

N2 - Electron emission currents and stability in the silicon-Tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-Tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%.

AB - Electron emission currents and stability in the silicon-Tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-Tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%.

KW - Field Emission Arrays(FEAs)

KW - Nb(Niobium)-Silicide.

KW - Silicon-Tip

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U2 - 10.1109/ASID.1999.762711

DO - 10.1109/ASID.1999.762711

M3 - Conference contribution

AN - SCOPUS:84896914590

T3 - Proceedings of the 5th Asian Symposium on Information Display, ASID 1999

SP - 49

EP - 52

BT - Proceedings of the 5th Asian Symposium on Information Display, ASID 1999

A2 - Shieh, Han-Ping D.

A2 - Wu, I-Wei

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th Asian Symposium on Information Display, ASID 1999

Y2 - 17 March 1999 through 19 March 1999

ER -

Park JS, Lee S, Ju BK, Jang J, Jeon D, Oh MH. Fabrication and estimation of characteristics for Nb-silicide FEAs. In Shieh HPD, Wu IW, editors, Proceedings of the 5th Asian Symposium on Information Display, ASID 1999. Institute of Electrical and Electronics Engineers Inc. 1999. p. 49-52. 762711. (Proceedings of the 5th Asian Symposium on Information Display, ASID 1999). doi: 10.1109/ASID.1999.762711

Fabrication and estimation of characteristics for Nb-silicide FEAs

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