Abstract
The high electron emission property of carbon nanotube (CNT) emitter grown is studied. CNT emitters were grown on silicon wafer by the resist-assisted patterning (RAP) process. The current of grown CNT emitter was high level more than 50mA. Through structural and electrical analysis, we discuss about the emission property of grown emitters.
| Original language | English |
|---|---|
| Title of host publication | Society for Information Display - 18th International Display Workshops 2011, IDW'11 |
| Pages | 1175-1177 |
| Number of pages | 3 |
| Publication status | Published - 2011 |
| Event | 18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 7 Dec 2011 → 9 Dec 2011 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 2 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 18th International Display Workshops 2011, IDW 2011 |
|---|---|
| Country/Territory | Japan |
| City | Nagoya |
| Period | 7/12/11 → 9/12/11 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
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