Fabrication of highly stable carbon nanotube electron beams(C-beam)

Jung Su Kang; Su Woong Lee; Ha Rim Lee; Ji Hwan Hong; Shikili Callixte; Min Tae Chung; Kyu Chang Park

doi:10.1109/IVNC.2015.7225542

Fabrication of highly stable carbon nanotube electron beams(C-beam)

Jung Su Kang, Su Woong Lee, Ha Rim Lee, Ji Hwan Hong, Shikili Callixte, Min Tae Chung, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We optimized the triode structure for carbon nanotube electron beam(C-beam) application with carbon nanotube emitters grown with resist-assisted pattering process. The CNT emitters grown through the RAP process have a structure in which a number of CNTs are congregated, and the graphitization post-treatment process proceeded in order to enhance their adhesive strength and stability. The gate mesh was self-aligned with the carbon nanotube island for lower leakage current, resulting higher electron emission current and transmission ratio. With the optimized triode structure, the emission current show high performance with less than 1 cm² area and C-beams operated more than 500 hours with constant current mode and DC driving.

Original language	English
Title of host publication	IVNC 2015 - Technical Digest
Subtitle of host publication	28th International Vacuum Nanoelectronics Conference
Editors	Qionghui Zou, Juncong She, Peng Ye, Jun Chen, Shaozhi Deng
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	92-93
Number of pages	2
ISBN (Electronic)	9781467393577
DOIs	https://doi.org/10.1109/IVNC.2015.7225542
Publication status	Published - 26 Aug 2015
Event	28th International Vacuum Nanoelectronics Conference, IVNC 2015 - Guangzhou, China Duration: 13 Jul 2015 → 17 Jul 2015

Publication series

Name	IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference

Conference

Conference	28th International Vacuum Nanoelectronics Conference, IVNC 2015
Country/Territory	China
City	Guangzhou
Period	13/07/15 → 17/07/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

CNT
Field emission

Access to Document

10.1109/IVNC.2015.7225542

Cite this

Kang, J. S., Lee, S. W., Lee, H. R., Hong, J. H., Callixte, S., Chung, M. T., & Park, K. C. (2015). Fabrication of highly stable carbon nanotube electron beams(C-beam). In Q. Zou, J. She, P. Ye, J. Chen, & S. Deng (Eds.), IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference (pp. 92-93). Article 7225542 (IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2015.7225542

Kang, Jung Su ; Lee, Su Woong ; Lee, Ha Rim et al. / Fabrication of highly stable carbon nanotube electron beams(C-beam). IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. editor / Qionghui Zou ; Juncong She ; Peng Ye ; Jun Chen ; Shaozhi Deng. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 92-93 (IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference).

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title = "Fabrication of highly stable carbon nanotube electron beams(C-beam)",

abstract = "We optimized the triode structure for carbon nanotube electron beam(C-beam) application with carbon nanotube emitters grown with resist-assisted pattering process. The CNT emitters grown through the RAP process have a structure in which a number of CNTs are congregated, and the graphitization post-treatment process proceeded in order to enhance their adhesive strength and stability. The gate mesh was self-aligned with the carbon nanotube island for lower leakage current, resulting higher electron emission current and transmission ratio. With the optimized triode structure, the emission current show high performance with less than 1 cm2 area and C-beams operated more than 500 hours with constant current mode and DC driving.",

keywords = "CNT, Field emission",

author = "Kang, {Jung Su} and Lee, {Su Woong} and Lee, {Ha Rim} and Hong, {Ji Hwan} and Shikili Callixte and Chung, {Min Tae} and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 28th International Vacuum Nanoelectronics Conference, IVNC 2015 ; Conference date: 13-07-2015 Through 17-07-2015",

year = "2015",

month = aug,

day = "26",

doi = "10.1109/IVNC.2015.7225542",

language = "English",

series = "IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference",

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Kang, JS, Lee, SW, Lee, HR, Hong, JH, Callixte, S, Chung, MT & Park, KC 2015, Fabrication of highly stable carbon nanotube electron beams(C-beam). in Q Zou, J She, P Ye, J Chen & S Deng (eds), IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference., 7225542, IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference, Institute of Electrical and Electronics Engineers Inc., pp. 92-93, 28th International Vacuum Nanoelectronics Conference, IVNC 2015, Guangzhou, China, 13/07/15. https://doi.org/10.1109/IVNC.2015.7225542

Fabrication of highly stable carbon nanotube electron beams(C-beam). / Kang, Jung Su; Lee, Su Woong; Lee, Ha Rim et al.
IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. ed. / Qionghui Zou; Juncong She; Peng Ye; Jun Chen; Shaozhi Deng. Institute of Electrical and Electronics Engineers Inc., 2015. p. 92-93 7225542 (IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Fabrication of highly stable carbon nanotube electron beams(C-beam)

AU - Kang, Jung Su

AU - Lee, Su Woong

AU - Lee, Ha Rim

AU - Hong, Ji Hwan

AU - Callixte, Shikili

AU - Chung, Min Tae

AU - Park, Kyu Chang

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N2 - We optimized the triode structure for carbon nanotube electron beam(C-beam) application with carbon nanotube emitters grown with resist-assisted pattering process. The CNT emitters grown through the RAP process have a structure in which a number of CNTs are congregated, and the graphitization post-treatment process proceeded in order to enhance their adhesive strength and stability. The gate mesh was self-aligned with the carbon nanotube island for lower leakage current, resulting higher electron emission current and transmission ratio. With the optimized triode structure, the emission current show high performance with less than 1 cm2 area and C-beams operated more than 500 hours with constant current mode and DC driving.

AB - We optimized the triode structure for carbon nanotube electron beam(C-beam) application with carbon nanotube emitters grown with resist-assisted pattering process. The CNT emitters grown through the RAP process have a structure in which a number of CNTs are congregated, and the graphitization post-treatment process proceeded in order to enhance their adhesive strength and stability. The gate mesh was self-aligned with the carbon nanotube island for lower leakage current, resulting higher electron emission current and transmission ratio. With the optimized triode structure, the emission current show high performance with less than 1 cm2 area and C-beams operated more than 500 hours with constant current mode and DC driving.

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KW - Field emission

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T3 - IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference

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BT - IVNC 2015 - Technical Digest

A2 - Zou, Qionghui

A2 - She, Juncong

A2 - Ye, Peng

A2 - Chen, Jun

A2 - Deng, Shaozhi

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 28th International Vacuum Nanoelectronics Conference, IVNC 2015

Y2 - 13 July 2015 through 17 July 2015

ER -

Kang JS, Lee SW, Lee HR, Hong JH, Callixte S, Chung MT et al. Fabrication of highly stable carbon nanotube electron beams(C-beam). In Zou Q, She J, Ye P, Chen J, Deng S, editors, IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 92-93. 7225542. (IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference). doi: 10.1109/IVNC.2015.7225542

Fabrication of highly stable carbon nanotube electron beams(C-beam)

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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