Fabrication of small CNT emitters for high resolution X-ray source

Youngju Eom; Suwoong Lee; Haena Won; Jungsu Kang; Jin Jnag; K. C. Park

doi:10.1109/IVNC.2012.6316990

Fabrication of small CNT emitters for high resolution X-ray source

Youngju Eom, Suwoong Lee, Haena Won, Jungsu Kang, Jin Jnag, K. C. Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We studied the fabrication of small area CNT emitters using resist-assisted patterning (RAP) process. CNT emitters grown on silicon substrate achieve higher emission current over 40 mA in the dimension of 7.8 × 10 ^-2 cm ² with current density over 500 mA/cm ². However, with small area (200 × 500 μm ² elliptical shape) CNT emitters, we can achieve the most highest emission current density of 10 A/cm ² and 8 mA emission current.

Original language	English
Title of host publication	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om
Pages	404-405
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2012.6316990
Publication status	Published - 2012
Event	25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju, Korea, Republic of Duration: 9 Jul 2012 → 13 Jul 2012

Publication series

Name	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Conference

Conference	25th International Vacuum Nanoelectronics Conference, IVNC 2012
Country/Territory	Korea, Republic of
City	Jeju
Period	9/07/12 → 13/07/12

Keywords

CNT
RAP
high resolution
x-ray source

Access to Document

10.1109/IVNC.2012.6316990

Cite this

Eom, Y., Lee, S., Won, H., Kang, J., Jnag, J., & Park, K. C. (2012). Fabrication of small CNT emitters for high resolution X-ray source. In Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om (pp. 404-405). Article 6316990 (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012). https://doi.org/10.1109/IVNC.2012.6316990

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title = "Fabrication of small CNT emitters for high resolution X-ray source",

abstract = "We studied the fabrication of small area CNT emitters using resist-assisted patterning (RAP) process. CNT emitters grown on silicon substrate achieve higher emission current over 40 mA in the dimension of 7.8 × 10 -2 cm 2 with current density over 500 mA/cm 2. However, with small area (200 × 500 μm 2 elliptical shape) CNT emitters, we can achieve the most highest emission current density of 10 A/cm 2 and 8 mA emission current.",

keywords = "CNT, RAP, high resolution, x-ray source",

author = "Youngju Eom and Suwoong Lee and Haena Won and Jungsu Kang and Jin Jnag and Park, {K. C.}",

year = "2012",

doi = "10.1109/IVNC.2012.6316990",

language = "English",

isbn = "9781467319812",

series = "Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012",

pages = "404--405",

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}

Eom, Y, Lee, S, Won, H, Kang, J, Jnag, J & Park, KC 2012, Fabrication of small CNT emitters for high resolution X-ray source. in Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om., 6316990, Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, pp. 404-405, 25th International Vacuum Nanoelectronics Conference, IVNC 2012, Jeju, Korea, Republic of, 9/07/12. https://doi.org/10.1109/IVNC.2012.6316990

Fabrication of small CNT emitters for high resolution X-ray source. / Eom, Youngju; Lee, Suwoong; Won, Haena et al.
Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om. 2012. p. 404-405 6316990 (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of small CNT emitters for high resolution X-ray source

AU - Eom, Youngju

AU - Lee, Suwoong

AU - Won, Haena

AU - Kang, Jungsu

AU - Jnag, Jin

AU - Park, K. C.

PY - 2012

Y1 - 2012

N2 - We studied the fabrication of small area CNT emitters using resist-assisted patterning (RAP) process. CNT emitters grown on silicon substrate achieve higher emission current over 40 mA in the dimension of 7.8 × 10 -2 cm 2 with current density over 500 mA/cm 2. However, with small area (200 × 500 μm 2 elliptical shape) CNT emitters, we can achieve the most highest emission current density of 10 A/cm 2 and 8 mA emission current.

AB - We studied the fabrication of small area CNT emitters using resist-assisted patterning (RAP) process. CNT emitters grown on silicon substrate achieve higher emission current over 40 mA in the dimension of 7.8 × 10 -2 cm 2 with current density over 500 mA/cm 2. However, with small area (200 × 500 μm 2 elliptical shape) CNT emitters, we can achieve the most highest emission current density of 10 A/cm 2 and 8 mA emission current.

KW - CNT

KW - RAP

KW - high resolution

KW - x-ray source

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U2 - 10.1109/IVNC.2012.6316990

DO - 10.1109/IVNC.2012.6316990

M3 - Conference contribution

AN - SCOPUS:84869041414

SN - 9781467319812

T3 - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

SP - 404

EP - 405

BT - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om

T2 - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Y2 - 9 July 2012 through 13 July 2012

ER -

Fabrication of small CNT emitters for high resolution X-ray source

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Keywords

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