Fabrication of wide bandgap anode layer for deep UV lighting with CNT cold cathode electron beam

Sung Tae Yoo; Jung Su Kang; Kyu Chang Park

Fabrication of wide bandgap anode layer for deep UV lighting with CNT cold cathode electron beam

Sung Tae Yoo, Jung Su Kang, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We developed enhanced deep UV generation with wide band gap anode layer and carbon nanotube (CNT) cold cathode electron beam (C-beam). We used C-beam with high performance to excite the ultraviolet (UV) anode. To improve deep UV generation, we fabricated the anode using anode buffer layer of SiO2. An improved deep UV was obtained at a wavelength of 226 and 244 nm with a wide band gap anode using an anode buffer layer.

Original language	English
Title of host publication	24th International Display Workshops, IDW 2017
Publisher	International Display Workshops
Pages	1394-1396
Number of pages	3
ISBN (Electronic)	9781510858992
Publication status	Published - 2017
Event	24th International Display Workshops, IDW 2017 - Sendai, Japan Duration: 6 Dec 2017 → 8 Dec 2017

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	24th International Display Workshops, IDW 2017
Country/Territory	Japan
City	Sendai
Period	6/12/17 → 8/12/17

Bibliographical note

Publisher Copyright:
© 2017 Proceedings of the International Display Workshops. All rights reserved.

Keywords

CNT emitters
Deep UV
Electron beam
Field emission

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Fabrication of wide bandgap anode layer for deep UV lighting with CNT cold cathode electron beam",

abstract = "We developed enhanced deep UV generation with wide band gap anode layer and carbon nanotube (CNT) cold cathode electron beam (C-beam). We used C-beam with high performance to excite the ultraviolet (UV) anode. To improve deep UV generation, we fabricated the anode using anode buffer layer of SiO2. An improved deep UV was obtained at a wavelength of 226 and 244 nm with a wide band gap anode using an anode buffer layer.",

keywords = "CNT emitters, Deep UV, Electron beam, Field emission",

author = "Yoo, {Sung Tae} and Kang, {Jung Su} and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} 2017 Proceedings of the International Display Workshops. All rights reserved.; 24th International Display Workshops, IDW 2017 ; Conference date: 06-12-2017 Through 08-12-2017",

year = "2017",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "1394--1396",

booktitle = "24th International Display Workshops, IDW 2017",

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Fabrication of wide bandgap anode layer for deep UV lighting with CNT cold cathode electron beam. / Yoo, Sung Tae; Kang, Jung Su; Park, Kyu Chang.
24th International Display Workshops, IDW 2017. International Display Workshops, 2017. p. 1394-1396 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of wide bandgap anode layer for deep UV lighting with CNT cold cathode electron beam

AU - Yoo, Sung Tae

AU - Kang, Jung Su

AU - Park, Kyu Chang

PY - 2017

Y1 - 2017

N2 - We developed enhanced deep UV generation with wide band gap anode layer and carbon nanotube (CNT) cold cathode electron beam (C-beam). We used C-beam with high performance to excite the ultraviolet (UV) anode. To improve deep UV generation, we fabricated the anode using anode buffer layer of SiO2. An improved deep UV was obtained at a wavelength of 226 and 244 nm with a wide band gap anode using an anode buffer layer.

AB - We developed enhanced deep UV generation with wide band gap anode layer and carbon nanotube (CNT) cold cathode electron beam (C-beam). We used C-beam with high performance to excite the ultraviolet (UV) anode. To improve deep UV generation, we fabricated the anode using anode buffer layer of SiO2. An improved deep UV was obtained at a wavelength of 226 and 244 nm with a wide band gap anode using an anode buffer layer.

KW - CNT emitters

KW - Deep UV

KW - Electron beam

KW - Field emission

UR - http://www.scopus.com/inward/record.url?scp=85056207405&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85056207405

T3 - Proceedings of the International Display Workshops

SP - 1394

EP - 1396

BT - 24th International Display Workshops, IDW 2017

PB - International Display Workshops

T2 - 24th International Display Workshops, IDW 2017

Y2 - 6 December 2017 through 8 December 2017

ER -

Fabrication of wide bandgap anode layer for deep UV lighting with CNT cold cathode electron beam

Abstract

Publication series

Conference

Bibliographical note

Keywords

UN SDGs

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Cite this