Facile method for rGO field effect transistor: Selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction

Jieun Yang; Jung Woo Kim; Hyeon Suk Shin

doi:10.1002/adma.201104094

Facile method for rGO field effect transistor: Selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction

Jieun Yang, Jung Woo Kim, Hyeon Suk Shin

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.

Original language	English
Pages (from-to)	2299-2303
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	17
DOIs	https://doi.org/10.1002/adma.201104094
Publication status	Published - 2 May 2012

Keywords

doping
field effect transistors
reduced graphene oxide
self-assembled monolayer

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10.1002/adma.201104094

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abstract = "A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.",

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T2 - Selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction

AU - Yang, Jieun

AU - Kim, Jung Woo

AU - Shin, Hyeon Suk

PY - 2012/5/2

Y1 - 2012/5/2

N2 - A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.

AB - A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.

KW - doping

KW - field effect transistors

KW - reduced graphene oxide

KW - self-assembled monolayer

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DO - 10.1002/adma.201104094

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JO - Advanced Materials

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IS - 17

ER -

Facile method for rGO field effect transistor: Selective adsorption of rGO on SAM-treated gold electrode by electrostatic attraction

Abstract

Keywords

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