Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure

Junho Choi, Jacob Embley, Daria D. Blach, Raül Perea-Causín, Daniel Erkensten, Dong Seob Kim, Long Yuan, Woo Young Yoon, Takashi Taniguchi, Kenji Watanabe, Keiji Ueno, Emanuel Tutuc, Samuel Brem, Ermin Malic, Xiaoqin Li, Libai Huang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Transition metal dichalcogenide heterostructures provide a versatile platform to explore electronic and excitonic phases. As the excitation density exceeds the critical Mott density, interlayer excitons are ionized into an electron-hole plasma phase. The transport of the highly non-equilibrium plasma is relevant for high-power optoelectronic devices but has not been carefully investigated previously. Here, we employ spatially resolved pump-probe microscopy to investigate the spatial-temporal dynamics of interlayer excitons and hot-plasma phase in a MoSe2/WSe2twisted bilayer. At the excitation density of ∼1014cm-2, well exceeding the Mott density, we find a surprisingly rapid initial expansion of hot plasma to a few microns away from the excitation source within ∼0.2 ps. Microscopic theory reveals that this rapid expansion is mainly driven by Fermi pressure and Coulomb repulsion, while the hot carrier effect has only a minor effect in the plasma phase.

Original languageEnglish
Pages (from-to)4399-4405
Number of pages7
JournalNano Letters
Volume23
Issue number10
DOIs
Publication statusPublished - 24 May 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society. All rights reserved.

Keywords

  • MoSe
  • WSe
  • exciton
  • transition metal dichalcogenides
  • van der Waals heterostructure

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