Ferroelectric domain wall current corresponding to ferroelectric domain structures of BaTiO₃ nanodots fabricated by dip-pen nanolithography

In this study, we investigated the ferroelectric domain wall current corresponding to the ferroelectric domain structures of BaTiO₃ (BTO) nanodots deposited on Nb-doped SrTiO₃ substrates using the dip-pen nanolithography (DPN) method. By controlling the DPN deposition time, the deposited BTO nanodots with a diameter of 60–200 nm were crystallized by heat treatment at 800°C. The ferroelectric domain structures of BTO nanodots were observed through piezoresponse force microscope studies, and the formation of domain walls was observed. Relatively large ferroelectric domain wall currents formed on the ferroelectric domain wall produced by BTO nanodots and currents corresponding to the ferroelectric polarization direction around the domain wall were observed through a conducting atomic force microscope.