Ferroelectric properties of highly a -oriented polycrystalline Bi2WO6 thin films grown on glass substrates

Yoonho Ahn; Jong Yeog Son

doi:10.1063/1.4965925

Ferroelectric properties of highly a -oriented polycrystalline Bi₂WO₆ thin films grown on glass substrates

Yoonho Ahn
, Jong Yeog Son

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Polycrystalline Bi₂WO₆ (BWO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition (PLD). In this study, we comparatively investigate the influence of oxygen partial pressure on structural and ferroelectric properties of the BWO films. In comparison with the BWO films deposited at oxygen partial pressure of 100 and 300 mTorr, the BWO film deposited at 300 mTorr exhibits a highly a-oriented crystalline structure. The highly a-oriented polycrystalline BWO thin film shows good ferroelectric properties with a remnant polarization of about 21.5μC/cm2. The piezoresponse force microscope study reveals that the highly a-oriented BWO thin film possesses larger ferroelectric domain patterns due to smaller domain wall energy.

Original language	English
Article number	105008
Journal	AIP Advances
Volume	6
Issue number	10
DOIs	https://doi.org/10.1063/1.4965925
Publication status	Published - 1 Oct 2016

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title = "Ferroelectric properties of highly a -oriented polycrystalline Bi2WO6 thin films grown on glass substrates",

abstract = "Polycrystalline Bi2WO6 (BWO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition (PLD). In this study, we comparatively investigate the influence of oxygen partial pressure on structural and ferroelectric properties of the BWO films. In comparison with the BWO films deposited at oxygen partial pressure of 100 and 300 mTorr, the BWO film deposited at 300 mTorr exhibits a highly a-oriented crystalline structure. The highly a-oriented polycrystalline BWO thin film shows good ferroelectric properties with a remnant polarization of about 21.5μC/cm2. The piezoresponse force microscope study reveals that the highly a-oriented BWO thin film possesses larger ferroelectric domain patterns due to smaller domain wall energy.",

author = "Yoonho Ahn and Son, \{Jong Yeog\}",

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AU - Ahn, Yoonho

AU - Son, Jong Yeog

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N2 - Polycrystalline Bi2WO6 (BWO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition (PLD). In this study, we comparatively investigate the influence of oxygen partial pressure on structural and ferroelectric properties of the BWO films. In comparison with the BWO films deposited at oxygen partial pressure of 100 and 300 mTorr, the BWO film deposited at 300 mTorr exhibits a highly a-oriented crystalline structure. The highly a-oriented polycrystalline BWO thin film shows good ferroelectric properties with a remnant polarization of about 21.5μC/cm2. The piezoresponse force microscope study reveals that the highly a-oriented BWO thin film possesses larger ferroelectric domain patterns due to smaller domain wall energy.

AB - Polycrystalline Bi2WO6 (BWO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition (PLD). In this study, we comparatively investigate the influence of oxygen partial pressure on structural and ferroelectric properties of the BWO films. In comparison with the BWO films deposited at oxygen partial pressure of 100 and 300 mTorr, the BWO film deposited at 300 mTorr exhibits a highly a-oriented crystalline structure. The highly a-oriented polycrystalline BWO thin film shows good ferroelectric properties with a remnant polarization of about 21.5μC/cm2. The piezoresponse force microscope study reveals that the highly a-oriented BWO thin film possesses larger ferroelectric domain patterns due to smaller domain wall energy.

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DO - 10.1063/1.4965925

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VL - 6

JO - AIP Advances

JF - AIP Advances

IS - 10

M1 - 105008

ER -

Ferroelectric properties of highly a -oriented polycrystalline Bi₂WO₆ thin films grown on glass substrates

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