Abstract
We studied the field emission properties of carbon nanostructure, which comprised of high density carbon nanotips on Si. These carbon nanotips are grown on metal coated Si by a high density plasma chemical vapor deposition (HDPCVD) using an inductively coupled plasma. The emission current increases with increasing the growth temperature. They exhibited an emission current density of 1 mA/cm2 at a field of 1.95 V/μm when the growth temperature was 700 °C. We developed high brightness field emission lamps using the carbon nanotips.
| Original language | English |
|---|---|
| Pages (from-to) | 983-987 |
| Number of pages | 5 |
| Journal | International Journal of Modern Physics B |
| Volume | 16 |
| Issue number | 6-7 |
| DOIs | |
| Publication status | Published - 20 Mar 2002 |
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