Abstract
We have studied the flexibility of the p-channel LTPS-TFT on 150-μm-thick flexible metal foil. The p-channel, non-laser poly-Si TFT on the metal foil exhibited the field-effect mobility of 107.5 cm2/Vs, the threshold voltage of -6.7 V, the gate voltage swing of 0.9 V/dec., and the minimum off current of 10-12 A/pm at Vds=-0.1 V. The TFT performance is stable until 10,000 bendings with the strain of 0.6%.
| Original language | English |
|---|---|
| Pages (from-to) | 272-275 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 38 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | 2007 SID International Symposium - Long Beach, CA, United States Duration: 23 May 2007 → 25 May 2007 |
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