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Flexibility study of high-performance LTPS-TFT on flexible metal foil

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3 Citations (Scopus)

Abstract

We have studied the flexibility of the p-channel LTPS-TFT on 150-μm-thick flexible metal foil. The p-channel, non-laser poly-Si TFT on the metal foil exhibited the field-effect mobility of 107.5 cm2/Vs, the threshold voltage of -6.7 V, the gate voltage swing of 0.9 V/dec., and the minimum off current of 10-12 A/pm at Vds=-0.1 V. The TFT performance is stable until 10,000 bendings with the strain of 0.6%.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume38
Issue number1
DOIs
Publication statusPublished - 2007
Event2007 SID International Symposium - Long Beach, CA, United States
Duration: 23 May 200725 May 2007

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