Flexible memory applications using oxide semiconductor thin-film transistors

S. M. Yoon; S. J. Kim; M. J. Park; D. J. Yun

doi:10.1149/07510.0227ecst

Flexible memory applications using oxide semiconductor thin-film transistors

S. M. Yoon
, S. J. Kim
, M. J. Park
, D. J. Yun

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

Flexible charge-trap memory thin-film transistors (f-MTFTs) using oxide semiconductors were proposed and fabricated on plastic poly(ethylene naphthalate) substrate. The gate-stack of the f-MTFT was composed of all oxide layers such as In-Ga-Zn-O (IGZO) active channel, ZnO charge-trap layer, Al₂O₃ blocking/tunneling layers, and In-Sn-O transparent electrode, in which hybrid barrier layer structures and double-layered tunneling oxides were designed so that the f-MTFTs could exhibit stable and excellent device performance. The memory device characteristics were not degraded even under the bending situation with a given curvature radius of 3.3 mm.

Original language	English
Title of host publication	Thin Film Transistors 13, TFT 13
Editors	Y. Kuo
Publisher	Electrochemical Society Inc.
Pages	227-233
Number of pages	7
Edition	10
ISBN (Electronic)	9781607687276, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07510.0227ecst
Publication status	Published - 2016
Event	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2 Oct 2016 → 7 Oct 2016

Publication series

Name	ECS Transactions
Number	10
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	2/10/16 → 7/10/16

Bibliographical note

Publisher Copyright:
© 2016 The Electrochemical Society.

Access to Document

10.1149/07510.0227ecst

Cite this

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title = "Flexible memory applications using oxide semiconductor thin-film transistors",

abstract = "Flexible charge-trap memory thin-film transistors (f-MTFTs) using oxide semiconductors were proposed and fabricated on plastic poly(ethylene naphthalate) substrate. The gate-stack of the f-MTFT was composed of all oxide layers such as In-Ga-Zn-O (IGZO) active channel, ZnO charge-trap layer, Al2O3 blocking/tunneling layers, and In-Sn-O transparent electrode, in which hybrid barrier layer structures and double-layered tunneling oxides were designed so that the f-MTFTs could exhibit stable and excellent device performance. The memory device characteristics were not degraded even under the bending situation with a given curvature radius of 3.3 mm.",

author = "Yoon, \{S. M.\} and Kim, \{S. J.\} and Park, \{M. J.\} and Yun, \{D. J.\}",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

doi = "10.1149/07510.0227ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "227--233",

editor = "Y. Kuo",

booktitle = "Thin Film Transistors 13, TFT 13",

edition = "10",

}

Yoon, SM, Kim, SJ, Park, MJ & Yun, DJ 2016, Flexible memory applications using oxide semiconductor thin-film transistors. in Y Kuo (ed.), Thin Film Transistors 13, TFT 13. 10 edn, ECS Transactions, no. 10, vol. 75, Electrochemical Society Inc., pp. 227-233, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 2/10/16. https://doi.org/10.1149/07510.0227ecst

TY - GEN

T1 - Flexible memory applications using oxide semiconductor thin-film transistors

AU - Yoon, S. M.

AU - Kim, S. J.

AU - Park, M. J.

AU - Yun, D. J.

PY - 2016

Y1 - 2016

N2 - Flexible charge-trap memory thin-film transistors (f-MTFTs) using oxide semiconductors were proposed and fabricated on plastic poly(ethylene naphthalate) substrate. The gate-stack of the f-MTFT was composed of all oxide layers such as In-Ga-Zn-O (IGZO) active channel, ZnO charge-trap layer, Al2O3 blocking/tunneling layers, and In-Sn-O transparent electrode, in which hybrid barrier layer structures and double-layered tunneling oxides were designed so that the f-MTFTs could exhibit stable and excellent device performance. The memory device characteristics were not degraded even under the bending situation with a given curvature radius of 3.3 mm.

AB - Flexible charge-trap memory thin-film transistors (f-MTFTs) using oxide semiconductors were proposed and fabricated on plastic poly(ethylene naphthalate) substrate. The gate-stack of the f-MTFT was composed of all oxide layers such as In-Ga-Zn-O (IGZO) active channel, ZnO charge-trap layer, Al2O3 blocking/tunneling layers, and In-Sn-O transparent electrode, in which hybrid barrier layer structures and double-layered tunneling oxides were designed so that the f-MTFTs could exhibit stable and excellent device performance. The memory device characteristics were not degraded even under the bending situation with a given curvature radius of 3.3 mm.

UR - https://www.scopus.com/pages/publications/84991608352

U2 - 10.1149/07510.0227ecst

DO - 10.1149/07510.0227ecst

M3 - Conference contribution

AN - SCOPUS:84991608352

T3 - ECS Transactions

SP - 227

EP - 233

BT - Thin Film Transistors 13, TFT 13

A2 - Kuo, Y.

PB - Electrochemical Society Inc.

T2 - Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -

Flexible memory applications using oxide semiconductor thin-film transistors

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