Flexoelectric switching characteristics depending on crystallinity of highly c-oriented epitaxial SrBi2Nb2O9 thin film

Hyun Wook Shin; Jong Yeog Son

doi:10.1016/j.jallcom.2019.02.161

Flexoelectric switching characteristics depending on crystallinity of highly c-oriented epitaxial SrBi₂Nb₂O₉ thin film

Hyun Wook Shin
, Jong Yeog Son

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We demonstrated the formation and reading of flexoelectrically-switched polarization nanobits in c-oriented, epitaxial layered-perovskite thin films. Highly c-oriented epitaxial SrBi₂Nb₂O₉ (SBN) thin films were deposited on Nb-doped single crystal (100) SrTiO₃ (Nb:STO) substrates via pulsed laser deposition (PLD) technology. X-ray diffraction (XRD) experiments, ferroelectric hysteresis loops, leakage current curves, and fatigue characteristics revealed that these films preferred in-plane oriented domains. Flexoelectrically switched polarization nanobits with horizontally switched domains were formed within an upwardly switched domain of the c-oriented epitaxial SBN thin film by applying external forces orthogonal to the surface. In particular, flexoelectrically switched polarization nanobits didn't have out-of-plane-oriented domains, reflecting the c-oriented nature of the Aurivillius SBN thin film.

Original language	English
Pages (from-to)	311-317
Number of pages	7
Journal	Journal of Alloys and Compounds
Volume	788
DOIs	https://doi.org/10.1016/j.jallcom.2019.02.161
Publication status	Published - 5 Jun 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

Flexoelectrically switched polarization nanobits
Highly c-oriented epitaxial SrBiNbO thin films
Out-of-plane-oriented domains

Access to Document

10.1016/j.jallcom.2019.02.161

Cite this

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title = "Flexoelectric switching characteristics depending on crystallinity of highly c-oriented epitaxial SrBi2Nb2O9 thin film",

abstract = "We demonstrated the formation and reading of flexoelectrically-switched polarization nanobits in c-oriented, epitaxial layered-perovskite thin films. Highly c-oriented epitaxial SrBi2Nb2O9 (SBN) thin films were deposited on Nb-doped single crystal (100) SrTiO3 (Nb:STO) substrates via pulsed laser deposition (PLD) technology. X-ray diffraction (XRD) experiments, ferroelectric hysteresis loops, leakage current curves, and fatigue characteristics revealed that these films preferred in-plane oriented domains. Flexoelectrically switched polarization nanobits with horizontally switched domains were formed within an upwardly switched domain of the c-oriented epitaxial SBN thin film by applying external forces orthogonal to the surface. In particular, flexoelectrically switched polarization nanobits didn't have out-of-plane-oriented domains, reflecting the c-oriented nature of the Aurivillius SBN thin film.",

keywords = "Flexoelectrically switched polarization nanobits, Highly c-oriented epitaxial SrBiNbO thin films, Out-of-plane-oriented domains",

author = "Shin, \{Hyun Wook\} and Son, \{Jong Yeog\}",

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year = "2019",

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doi = "10.1016/j.jallcom.2019.02.161",

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T1 - Flexoelectric switching characteristics depending on crystallinity of highly c-oriented epitaxial SrBi2Nb2O9 thin film

AU - Shin, Hyun Wook

AU - Son, Jong Yeog

PY - 2019/6/5

Y1 - 2019/6/5

N2 - We demonstrated the formation and reading of flexoelectrically-switched polarization nanobits in c-oriented, epitaxial layered-perovskite thin films. Highly c-oriented epitaxial SrBi2Nb2O9 (SBN) thin films were deposited on Nb-doped single crystal (100) SrTiO3 (Nb:STO) substrates via pulsed laser deposition (PLD) technology. X-ray diffraction (XRD) experiments, ferroelectric hysteresis loops, leakage current curves, and fatigue characteristics revealed that these films preferred in-plane oriented domains. Flexoelectrically switched polarization nanobits with horizontally switched domains were formed within an upwardly switched domain of the c-oriented epitaxial SBN thin film by applying external forces orthogonal to the surface. In particular, flexoelectrically switched polarization nanobits didn't have out-of-plane-oriented domains, reflecting the c-oriented nature of the Aurivillius SBN thin film.

AB - We demonstrated the formation and reading of flexoelectrically-switched polarization nanobits in c-oriented, epitaxial layered-perovskite thin films. Highly c-oriented epitaxial SrBi2Nb2O9 (SBN) thin films were deposited on Nb-doped single crystal (100) SrTiO3 (Nb:STO) substrates via pulsed laser deposition (PLD) technology. X-ray diffraction (XRD) experiments, ferroelectric hysteresis loops, leakage current curves, and fatigue characteristics revealed that these films preferred in-plane oriented domains. Flexoelectrically switched polarization nanobits with horizontally switched domains were formed within an upwardly switched domain of the c-oriented epitaxial SBN thin film by applying external forces orthogonal to the surface. In particular, flexoelectrically switched polarization nanobits didn't have out-of-plane-oriented domains, reflecting the c-oriented nature of the Aurivillius SBN thin film.

KW - Flexoelectrically switched polarization nanobits

KW - Highly c-oriented epitaxial SrBiNbO thin films

KW - Out-of-plane-oriented domains

UR - https://www.scopus.com/pages/publications/85061907430

U2 - 10.1016/j.jallcom.2019.02.161

DO - 10.1016/j.jallcom.2019.02.161

M3 - Article

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SN - 0925-8388

VL - 788

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JO - Journal of Alloys and Compounds

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