Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy

Chinkyo Kim; Min Yang; Wonsang Lee; Jaehyung Yi; Sungwoo Kim; Yoonho Choi; Tae Kyung Yoo; Seon Tai Kim

doi:10.1016/S0022-0248(00)00364-X

Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy

Chinkyo Kim, Min Yang, Wonsang Lee, Jaehyung Yi, Sungwoo Kim, Yoonho Choi, Tae Kyung Yoo, Seon Tai Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Heteroepitaxial GaN film was grown on sapphire (0001) substrate by hydride vapor-phase epitaxy and it was observed employing scanning electron microscopy and cathodoluminescence that there were microstructural inhomogeneous areas showing suppressed luminescence characteristics compared with the surrounding matrix. They were presumed to be induced by polarity-inverted domains identified on the basis of the chemical inertness and heavily doped characteristics manifested in cathodoluminescence spectra.

Original language	English
Pages (from-to)	235-240
Number of pages	6
Journal	Journal of Crystal Growth
Volume	213
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(00)00364-X
Publication status	Published - 1 Jun 2000

Keywords

Cathodoluminescence
Chemical etching
Domain inversion
GaN
HVPE

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10.1016/S0022-0248(00)00364-X

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title = "Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy",

abstract = "Heteroepitaxial GaN film was grown on sapphire (0001) substrate by hydride vapor-phase epitaxy and it was observed employing scanning electron microscopy and cathodoluminescence that there were microstructural inhomogeneous areas showing suppressed luminescence characteristics compared with the surrounding matrix. They were presumed to be induced by polarity-inverted domains identified on the basis of the chemical inertness and heavily doped characteristics manifested in cathodoluminescence spectra.",

keywords = "Cathodoluminescence, Chemical etching, Domain inversion, GaN, HVPE",

author = "Chinkyo Kim and Min Yang and Wonsang Lee and Jaehyung Yi and Sungwoo Kim and Yoonho Choi and Yoo, {Tae Kyung} and Kim, {Seon Tai}",

year = "2000",

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doi = "10.1016/S0022-0248(00)00364-X",

language = "English",

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TY - JOUR

T1 - Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy

AU - Kim, Chinkyo

AU - Yang, Min

AU - Lee, Wonsang

AU - Yi, Jaehyung

AU - Kim, Sungwoo

AU - Choi, Yoonho

AU - Yoo, Tae Kyung

AU - Kim, Seon Tai

PY - 2000/6/1

Y1 - 2000/6/1

N2 - Heteroepitaxial GaN film was grown on sapphire (0001) substrate by hydride vapor-phase epitaxy and it was observed employing scanning electron microscopy and cathodoluminescence that there were microstructural inhomogeneous areas showing suppressed luminescence characteristics compared with the surrounding matrix. They were presumed to be induced by polarity-inverted domains identified on the basis of the chemical inertness and heavily doped characteristics manifested in cathodoluminescence spectra.

AB - Heteroepitaxial GaN film was grown on sapphire (0001) substrate by hydride vapor-phase epitaxy and it was observed employing scanning electron microscopy and cathodoluminescence that there were microstructural inhomogeneous areas showing suppressed luminescence characteristics compared with the surrounding matrix. They were presumed to be induced by polarity-inverted domains identified on the basis of the chemical inertness and heavily doped characteristics manifested in cathodoluminescence spectra.

KW - Cathodoluminescence

KW - Chemical etching

KW - Domain inversion

KW - GaN

KW - HVPE

UR - http://www.scopus.com/inward/record.url?scp=0000527427&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00364-X

DO - 10.1016/S0022-0248(00)00364-X

M3 - Article

AN - SCOPUS:0000527427

SN - 0022-0248

VL - 213

SP - 235

EP - 240

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy

Abstract

Keywords

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