Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode

Sputter-deposited SrVO_x was employed to create transparent conducting SrVO_x/Ag/SrVO_x films and their optical-electrical properties were examined as functions of SrVO_x and Ag thicknesses. With the increase in the thickness of SrVO_x films from 15 to 45 nm in the SrVO_x/Ag/SrVO_x films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 × 10²² − 1.03 × 10²² cm⁻³, 3.15−2.76 Ω/sq., and 21.99−19.76 cm²/Vs, respectively. The 25 nm-thick SrVO_x-based multilayer gave the highest average transmittance (T_av) of 91.5%. The 25 nm-thick SrVO_x-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 × 10⁻³ Ω⁻¹. With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 × 10²² − 1.99 × 10²² cm⁻³, 15.56−22.46 cm²/Vs, and 1.97−6.48 Ω/sq., respectively. The T_av of the SrVO_x (25 nm)/Ag/SrVO_x (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVO_x (25 nm)/Ag (15 nm)/SrVO_x (25 nm) samples. Based on the phasor examination, the effect of the SrVO_x film thickness on the transmittance characteristics of the multilayers is described and discussed.