Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM)

In this study, we report the process of surface modification and patterning of SAMs (self-assembled monolayers) using vertically aligned CNTs as emitter sources (C-beam lithography). We demonstrated the simply patterning process of C-beam lithography by using a diode configuration to transfer pattern onto silicon substrate. Through water contact angle measurement, we also investigated the surface modification of the OTS (octadecyl trichlorosilane) as SAMs. Using the small regime of current exposure at 0.28mA/cm2 and 60 s time exposure, the desirable patterns were appears after lift-off process. By utilizing the small power consumption bellow 1.5kV, the pattern can be easily formed on silicon substrate. By this study, we accomplished the new approach C-beam lithography as pre elementary study for alternative electron beam lithography.