Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM)

Alfi Rodiansyah; Kyu Chang Park

doi:10.1109/IVNC52431.2021.9600692

Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM)

Alfi Rodiansyah
, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this study, we report the process of surface modification and patterning of SAMs (self-assembled monolayers) using vertically aligned CNTs as emitter sources (C-beam lithography). We demonstrated the simply patterning process of C-beam lithography by using a diode configuration to transfer pattern onto silicon substrate. Through water contact angle measurement, we also investigated the surface modification of the OTS (octadecyl trichlorosilane) as SAMs. Using the small regime of current exposure at 0.28mA/cm2 and 60 s time exposure, the desirable patterns were appears after lift-off process. By utilizing the small power consumption bellow 1.5kV, the pattern can be easily formed on silicon substrate. By this study, we accomplished the new approach C-beam lithography as pre elementary study for alternative electron beam lithography.

Original language	English
Title of host publication	2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021
Editors	Stephen Purcell, Jean-Paul Mazellier
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665425896
DOIs	https://doi.org/10.1109/IVNC52431.2021.9600692
Publication status	Published - 2021
Event	34th International Vacuum Nanoelectronics Conference, IVNC 2021 - Virtual, Lyon, France Duration: 5 Jul 2021 → 9 Jul 2021

Publication series

Name	2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021

Conference

Conference	34th International Vacuum Nanoelectronics Conference, IVNC 2021
Country/Territory	France
City	Virtual, Lyon
Period	5/07/21 → 9/07/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Access to Document

10.1109/IVNC52431.2021.9600692

Cite this

Rodiansyah, A., & Park, K. C. (2021). Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM). In S. Purcell, & J.-P. Mazellier (Eds.), 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021 (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC52431.2021.9600692

Rodiansyah, Alfi ; Park, Kyu Chang. / Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM). 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. editor / Stephen Purcell ; Jean-Paul Mazellier. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021).

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title = "Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM)",

abstract = "In this study, we report the process of surface modification and patterning of SAMs (self-assembled monolayers) using vertically aligned CNTs as emitter sources (C-beam lithography). We demonstrated the simply patterning process of C-beam lithography by using a diode configuration to transfer pattern onto silicon substrate. Through water contact angle measurement, we also investigated the surface modification of the OTS (octadecyl trichlorosilane) as SAMs. Using the small regime of current exposure at 0.28mA/cm2 and 60 s time exposure, the desirable patterns were appears after lift-off process. By utilizing the small power consumption bellow 1.5kV, the pattern can be easily formed on silicon substrate. By this study, we accomplished the new approach C-beam lithography as pre elementary study for alternative electron beam lithography.",

author = "Alfi Rodiansyah and Park, \{Kyu Chang\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 34th International Vacuum Nanoelectronics Conference, IVNC 2021 ; Conference date: 05-07-2021 Through 09-07-2021",

year = "2021",

doi = "10.1109/IVNC52431.2021.9600692",

language = "English",

series = "2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Rodiansyah, A & Park, KC 2021, Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM). in S Purcell & J-P Mazellier (eds), 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021, Institute of Electrical and Electronics Engineers Inc., 34th International Vacuum Nanoelectronics Conference, IVNC 2021, Virtual, Lyon, France, 5/07/21. https://doi.org/10.1109/IVNC52431.2021.9600692

Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM). / Rodiansyah, Alfi; Park, Kyu Chang.
2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. ed. / Stephen Purcell; Jean-Paul Mazellier. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM)

AU - Rodiansyah, Alfi

AU - Park, Kyu Chang

PY - 2021

Y1 - 2021

N2 - In this study, we report the process of surface modification and patterning of SAMs (self-assembled monolayers) using vertically aligned CNTs as emitter sources (C-beam lithography). We demonstrated the simply patterning process of C-beam lithography by using a diode configuration to transfer pattern onto silicon substrate. Through water contact angle measurement, we also investigated the surface modification of the OTS (octadecyl trichlorosilane) as SAMs. Using the small regime of current exposure at 0.28mA/cm2 and 60 s time exposure, the desirable patterns were appears after lift-off process. By utilizing the small power consumption bellow 1.5kV, the pattern can be easily formed on silicon substrate. By this study, we accomplished the new approach C-beam lithography as pre elementary study for alternative electron beam lithography.

AB - In this study, we report the process of surface modification and patterning of SAMs (self-assembled monolayers) using vertically aligned CNTs as emitter sources (C-beam lithography). We demonstrated the simply patterning process of C-beam lithography by using a diode configuration to transfer pattern onto silicon substrate. Through water contact angle measurement, we also investigated the surface modification of the OTS (octadecyl trichlorosilane) as SAMs. Using the small regime of current exposure at 0.28mA/cm2 and 60 s time exposure, the desirable patterns were appears after lift-off process. By utilizing the small power consumption bellow 1.5kV, the pattern can be easily formed on silicon substrate. By this study, we accomplished the new approach C-beam lithography as pre elementary study for alternative electron beam lithography.

UR - https://www.scopus.com/pages/publications/85123369884

U2 - 10.1109/IVNC52431.2021.9600692

DO - 10.1109/IVNC52431.2021.9600692

M3 - Conference contribution

AN - SCOPUS:85123369884

T3 - 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021

BT - 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021

A2 - Purcell, Stephen

A2 - Mazellier, Jean-Paul

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 34th International Vacuum Nanoelectronics Conference, IVNC 2021

Y2 - 5 July 2021 through 9 July 2021

ER -

Rodiansyah A, Park KC. Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM). In Purcell S, Mazellier JP, editors, 2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 34th International Vacuum Nanoelectronics Conference, IVNC 2021). doi: 10.1109/IVNC52431.2021.9600692

Functionalize of vertically aligned CNTs emitter (C-beam) for surface modification and patterning of self-assembled monolayers (SAM)

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