Abstract
We developed a giant-grain silicon (GGS) with a grain size reaching up to 100μm. The p-channel poly-Si TFT made of GGS exhibited a field-effect mobility of >100 cm2/Vs and a threshold voltage of -3.6 V and is very stable under gate and hot carrier bias-stress. This material is suitable for system on glass applications for next-generation displays.
| Original language | English |
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| Title of host publication | Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05 |
| Editors | H.P. David Shieh, F.C. Chen |
| Pages | 146-149 |
| Number of pages | 4 |
| Publication status | Published - 2005 |
| Event | International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan Duration: 21 Feb 2005 → 24 Feb 2005 |
Publication series
| Name | International Display Manufacturing Conference and Exhibition, IDMC'05 |
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Conference
| Conference | International Display Manufacturing Conference and Exhibition, IDMC'05 |
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| Country/Territory | Japan |
| City | Taipei |
| Period | 21/02/05 → 24/02/05 |
Bibliographical note
Funding Information:This work was supported by the National Research Lab Program of Korea.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.