Glass-based high brightness amled using dual gate coplanar a-igzo tft

Jin Woo Choi; Dae Ho Song; Hyung Il Chun; Min Woo Kim; Byungchoon Yang; Jong Ho Hong; Hyo Min Kim; Jin Jang; Sung Chan Jo

doi:10.1002/sdtp.13899

Glass-based high brightness amled using dual gate coplanar a-igzo tft

Jin Woo Choi, Dae Ho Song, Hyung Il Chun, Min Woo Kim, Byungchoon Yang, Jong Ho Hong, Hyo Min Kim, Jin Jang, Sung Chan Jo

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

In this study, we report the high-brightness 1.53 inch 130 PPI active-matrix light-emitting diode display (AMLED). Dual gate coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) is applied for the high brightness micro LED display. The micro LEDs optimized for the a-IGZO TFT backplane are fabricated, and the low-temperature eutectic bonding is applied to prevent thermal bonding damage. Finally, the glass based AMLED over ~ 10,000 cd/m² is demonstrated, using the dual gate coplanar a-IGZO TFT.

Original language	English
Pages (from-to)	440-443
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	51
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.13899
Publication status	Published - 2020
Event	57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online Duration: 3 Aug 2020 → 7 Aug 2020

Bibliographical note

Publisher Copyright:
© 2020 SID.

Keywords

A-IGZO
AMLED
Eutectic bonding
High brightness
Micro LED

Access to Document

10.1002/sdtp.13899

Cite this

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title = "Glass-based high brightness amled using dual gate coplanar a-igzo tft",

abstract = "In this study, we report the high-brightness 1.53 inch 130 PPI active-matrix light-emitting diode display (AMLED). Dual gate coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) is applied for the high brightness micro LED display. The micro LEDs optimized for the a-IGZO TFT backplane are fabricated, and the low-temperature eutectic bonding is applied to prevent thermal bonding damage. Finally, the glass based AMLED over ~ 10,000 cd/m² is demonstrated, using the dual gate coplanar a-IGZO TFT.",

keywords = "A-IGZO, AMLED, Eutectic bonding, High brightness, Micro LED",

author = "Choi, {Jin Woo} and Song, {Dae Ho} and Chun, {Hyung Il} and Kim, {Min Woo} and Byungchoon Yang and Hong, {Jong Ho} and Kim, {Hyo Min} and Jin Jang and Jo, {Sung Chan}",

note = "Publisher Copyright: {\textcopyright} 2020 SID.; 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 ; Conference date: 03-08-2020 Through 07-08-2020",

year = "2020",

doi = "10.1002/sdtp.13899",

language = "English",

volume = "51",

pages = "440--443",

journal = "Digest of Technical Papers - SID International Symposium",

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T1 - Glass-based high brightness amled using dual gate coplanar a-igzo tft

AU - Choi, Jin Woo

AU - Song, Dae Ho

AU - Chun, Hyung Il

AU - Kim, Min Woo

AU - Yang, Byungchoon

AU - Hong, Jong Ho

AU - Kim, Hyo Min

AU - Jang, Jin

AU - Jo, Sung Chan

PY - 2020

Y1 - 2020

N2 - In this study, we report the high-brightness 1.53 inch 130 PPI active-matrix light-emitting diode display (AMLED). Dual gate coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) is applied for the high brightness micro LED display. The micro LEDs optimized for the a-IGZO TFT backplane are fabricated, and the low-temperature eutectic bonding is applied to prevent thermal bonding damage. Finally, the glass based AMLED over ~ 10,000 cd/m² is demonstrated, using the dual gate coplanar a-IGZO TFT.

AB - In this study, we report the high-brightness 1.53 inch 130 PPI active-matrix light-emitting diode display (AMLED). Dual gate coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) is applied for the high brightness micro LED display. The micro LEDs optimized for the a-IGZO TFT backplane are fabricated, and the low-temperature eutectic bonding is applied to prevent thermal bonding damage. Finally, the glass based AMLED over ~ 10,000 cd/m² is demonstrated, using the dual gate coplanar a-IGZO TFT.

KW - A-IGZO

KW - AMLED

KW - Eutectic bonding

KW - High brightness

KW - Micro LED

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U2 - 10.1002/sdtp.13899

DO - 10.1002/sdtp.13899

M3 - Conference article

AN - SCOPUS:85094183774

SN - 0097-966X

VL - 51

SP - 440

EP - 443

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020

Y2 - 3 August 2020 through 7 August 2020

ER -

Glass-based high brightness amled using dual gate coplanar a-igzo tft

Abstract

Bibliographical note

Keywords

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