Abstract
Four kinds of Si-nanocrystal (NC) multilayers (MLs) have been fabricated on n-type Si wafers by changing the optical bandgap gradually in the directions towards the Si substrate or towards the center of the MLs through the variation of the NC size in each layer. Photovoltaic behaviors of the graded-size p-type Si-NC MLs/n-type Si-wafer heterojunction solar cells are shown to strongly depend on the ML structure. The Si-NC ML solar cells with a stepwise increase in the bandgap towards the center of the MLs exhibit best energy-conversion efficiency at low doping levels. These results are discussed based on the radiative and nonradiative processes in the graded-size Si-NC MLs, as analyzed by continuous-wave and time-resolved photoluminescence measurements.
Original language | English |
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Article number | 104304 |
Journal | Journal of Applied Physics |
Volume | 112 |
Issue number | 10 |
DOIs | |
Publication status | Published - 15 Nov 2012 |
Bibliographical note
Funding Information:This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (Ministry of Education, Science and Technology) (MEST), (No. 2010-00771).