Graphene/si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect

Dong Hee Shin; Sung Kim; Jong Min Kim; Chan Wook Jang; Ju Hwan Kim; Kyeong Won Lee; Jungkil Kim; Si Duck Oh; Dae Hun Lee; Soo Seok Kang; Chang Oh Kim; Suk Ho Choi; Kyung Joong Kim

doi:10.1002/adma.201500040

Graphene/si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect

Dong Hee Shin, Sung Kim, Jong Min Kim, Chan Wook Jang, Ju Hwan Kim, Kyeong Won Lee, Jungkil Kim, Si Duck Oh, Dae Hun Lee, Soo Seok Kang, Chang Oh Kim, Suk Ho Choi, Kyung Joong Kim

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.

Original language	English
Pages (from-to)	2614-2620
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	16
DOIs	https://doi.org/10.1002/adma.201500040
Publication status	Published - 24 Apr 2015

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

Keywords

Si quantum dots
graphene
heterojunction diodes
photodetectors
quantum confinement effect

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10.1002/adma.201500040

Cite this

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title = "Graphene/si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect",

abstract = "Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.",

keywords = "Si quantum dots, graphene, heterojunction diodes, photodetectors, quantum confinement effect",

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note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.",

year = "2015",

month = apr,

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doi = "10.1002/adma.201500040",

language = "English",

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AU - Kim, Sung

AU - Kim, Jong Min

AU - Jang, Chan Wook

AU - Kim, Ju Hwan

AU - Lee, Kyeong Won

AU - Kim, Jungkil

AU - Oh, Si Duck

AU - Lee, Dae Hun

AU - Kang, Soo Seok

AU - Kim, Chang Oh

AU - Choi, Suk Ho

AU - Kim, Kyung Joong

PY - 2015/4/24

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N2 - Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.

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KW - Si quantum dots

KW - graphene

KW - heterojunction diodes

KW - photodetectors

KW - quantum confinement effect

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Graphene/si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect

Abstract

Bibliographical note

Keywords

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