Growth and enhanced light emission of hybrid structures of ZnOSi nanocrystals

Sung Kim; Chang Oh Kim; Sung Won Hwang; Suk Ho Choi

doi:10.1063/1.2944255

Growth and enhanced light emission of hybrid structures of ZnOSi nanocrystals

Sung Kim, Chang Oh Kim, Sung Won Hwang, Suk Ho Choi

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Abstract

Hybrid nanostructures composed of ZnO nanocrystals (NCs) and Si NCs have been fabricated by annealing double layers of ZnO and SiO_x on Si (100) wafer at 1100 °C for 20 min. High-resolution transmission electron microscopy images demonstrate the coexistence of 4-5 nm ZnO NCs and 2-10 nm Si NCs in the range of x from 1.0 to 1.8. The photoluminescence intensity of the hybrid structures is almost 10 times larger at x=1.0 than that of the ZnO single layer and decreases with increasing x above 1.0, exactly consistent with the x -dependent intensity behaviors of the near-edge x-ray absorption fine structure features. These results are very promising in view of the strong enhancement in the luminescence from ZnO by forming hybrid structures of ZnOSi NCs.

Original language	English
Article number	243108
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2944255
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (R01-2007-000-20142-0). The HRTEM and NEXAFS measurements were performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute and the 7B1 beamline of Pohang Accelerator Laboratory at Pohang, Korea, respectively.

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title = "Growth and enhanced light emission of hybrid structures of ZnOSi nanocrystals",

abstract = "Hybrid nanostructures composed of ZnO nanocrystals (NCs) and Si NCs have been fabricated by annealing double layers of ZnO and SiOx on Si (100) wafer at 1100 °C for 20 min. High-resolution transmission electron microscopy images demonstrate the coexistence of 4-5 nm ZnO NCs and 2-10 nm Si NCs in the range of x from 1.0 to 1.8. The photoluminescence intensity of the hybrid structures is almost 10 times larger at x=1.0 than that of the ZnO single layer and decreases with increasing x above 1.0, exactly consistent with the x -dependent intensity behaviors of the near-edge x-ray absorption fine structure features. These results are very promising in view of the strong enhancement in the luminescence from ZnO by forming hybrid structures of ZnOSi NCs.",

author = "Sung Kim and Kim, {Chang Oh} and Hwang, {Sung Won} and Choi, {Suk Ho}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (R01-2007-000-20142-0). The HRTEM and NEXAFS measurements were performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute and the 7B1 beamline of Pohang Accelerator Laboratory at Pohang, Korea, respectively. ",

year = "2008",

doi = "10.1063/1.2944255",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Growth and enhanced light emission of hybrid structures of ZnOSi nanocrystals

AU - Kim, Sung

AU - Kim, Chang Oh

AU - Hwang, Sung Won

AU - Choi, Suk Ho

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (R01-2007-000-20142-0). The HRTEM and NEXAFS measurements were performed using the high-voltage electron microscope (JEM-ARM1300S, Jeol, Japan) installed at Korea Basic Science Institute and the 7B1 beamline of Pohang Accelerator Laboratory at Pohang, Korea, respectively.

PY - 2008

Y1 - 2008

N2 - Hybrid nanostructures composed of ZnO nanocrystals (NCs) and Si NCs have been fabricated by annealing double layers of ZnO and SiOx on Si (100) wafer at 1100 °C for 20 min. High-resolution transmission electron microscopy images demonstrate the coexistence of 4-5 nm ZnO NCs and 2-10 nm Si NCs in the range of x from 1.0 to 1.8. The photoluminescence intensity of the hybrid structures is almost 10 times larger at x=1.0 than that of the ZnO single layer and decreases with increasing x above 1.0, exactly consistent with the x -dependent intensity behaviors of the near-edge x-ray absorption fine structure features. These results are very promising in view of the strong enhancement in the luminescence from ZnO by forming hybrid structures of ZnOSi NCs.

AB - Hybrid nanostructures composed of ZnO nanocrystals (NCs) and Si NCs have been fabricated by annealing double layers of ZnO and SiOx on Si (100) wafer at 1100 °C for 20 min. High-resolution transmission electron microscopy images demonstrate the coexistence of 4-5 nm ZnO NCs and 2-10 nm Si NCs in the range of x from 1.0 to 1.8. The photoluminescence intensity of the hybrid structures is almost 10 times larger at x=1.0 than that of the ZnO single layer and decreases with increasing x above 1.0, exactly consistent with the x -dependent intensity behaviors of the near-edge x-ray absorption fine structure features. These results are very promising in view of the strong enhancement in the luminescence from ZnO by forming hybrid structures of ZnOSi NCs.

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U2 - 10.1063/1.2944255

DO - 10.1063/1.2944255

M3 - Article

AN - SCOPUS:45749112142

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243108

ER -

Growth and enhanced light emission of hybrid structures of ZnOSi nanocrystals

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