Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties

Heedon Hwang; Kwangmin Park; Sukho Yoon; Euijoon Yoon; Hyeonsik M. Cheong; Young Dong Kim

doi:10.1117/12.482480

Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties

Heedon Hwang, Kwangmin Park, Sukho Yoon, Euijoon Yoon, Hyeonsik M. Cheong, Young Dong Kim

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

InAs/InP self-assembled quantum dots (SAQDs) are promising active layers for optical devices for fiber-optic communication. Furthermore, they may be used for the fabrication of uncooled mid and far infrared detectors. InAs/InP SAQDs were grown by low pressure-metalorganic chemical vapor deposition, where As/P exchange reaction and growth interruption step play an important role. The InAs quantum dot (QD) stacks were successfully grown on (001) InP substrate and their optical properties were characterized. Far-infrared absorption peaks were observed at 819 cm^-1 (12.20 μm) and 518 cm^-1 (19.35 μm) at room temperature by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Raman analysis showed that the peak at 819 cm^-1 was attributed to a plasmon related peak in the n-type InP substrate. On the other hand, the absorption peak at 518 cm^-1 was regarded as a peak related with intersubband transition in the InAs QDs, suggesting that room temperature operating quantum dot infrared photodetectors (QDIPs) can be fabricated. In situ monitoring of the QD evolution and stacking sequences were also discussed.

Original language	English
Pages (from-to)	229-237
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4999
DOIs	https://doi.org/10.1117/12.482480
Publication status	Published - 2003
Event	Quantum Sensing: Evolution and Revolution from Past to Future - San Jose, CA, United States Duration: 27 Jan 2003 → 30 Jan 2003

Keywords

Absorption
FTIR
InAs
InP
Quantum dots
Raman
Spectral reflectance
Surface photoabsorption
VSQD

Access to Document

10.1117/12.482480

Cite this

@article{7ea7026be5254057971d2c15237bac85,

title = "Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties",

abstract = "InAs/InP self-assembled quantum dots (SAQDs) are promising active layers for optical devices for fiber-optic communication. Furthermore, they may be used for the fabrication of uncooled mid and far infrared detectors. InAs/InP SAQDs were grown by low pressure-metalorganic chemical vapor deposition, where As/P exchange reaction and growth interruption step play an important role. The InAs quantum dot (QD) stacks were successfully grown on (001) InP substrate and their optical properties were characterized. Far-infrared absorption peaks were observed at 819 cm-1 (12.20 μm) and 518 cm-1 (19.35 μm) at room temperature by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Raman analysis showed that the peak at 819 cm-1 was attributed to a plasmon related peak in the n-type InP substrate. On the other hand, the absorption peak at 518 cm-1 was regarded as a peak related with intersubband transition in the InAs QDs, suggesting that room temperature operating quantum dot infrared photodetectors (QDIPs) can be fabricated. In situ monitoring of the QD evolution and stacking sequences were also discussed.",

keywords = "Absorption, FTIR, InAs, InP, Quantum dots, Raman, Spectral reflectance, Surface photoabsorption, VSQD",

author = "Heedon Hwang and Kwangmin Park and Sukho Yoon and Euijoon Yoon and Cheong, {Hyeonsik M.} and {Dong Kim}, Young",

year = "2003",

doi = "10.1117/12.482480",

language = "English",

volume = "4999",

pages = "229--237",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties

AU - Hwang, Heedon

AU - Park, Kwangmin

AU - Yoon, Sukho

AU - Yoon, Euijoon

AU - Cheong, Hyeonsik M.

AU - Dong Kim, Young

PY - 2003

Y1 - 2003

N2 - InAs/InP self-assembled quantum dots (SAQDs) are promising active layers for optical devices for fiber-optic communication. Furthermore, they may be used for the fabrication of uncooled mid and far infrared detectors. InAs/InP SAQDs were grown by low pressure-metalorganic chemical vapor deposition, where As/P exchange reaction and growth interruption step play an important role. The InAs quantum dot (QD) stacks were successfully grown on (001) InP substrate and their optical properties were characterized. Far-infrared absorption peaks were observed at 819 cm-1 (12.20 μm) and 518 cm-1 (19.35 μm) at room temperature by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Raman analysis showed that the peak at 819 cm-1 was attributed to a plasmon related peak in the n-type InP substrate. On the other hand, the absorption peak at 518 cm-1 was regarded as a peak related with intersubband transition in the InAs QDs, suggesting that room temperature operating quantum dot infrared photodetectors (QDIPs) can be fabricated. In situ monitoring of the QD evolution and stacking sequences were also discussed.

AB - InAs/InP self-assembled quantum dots (SAQDs) are promising active layers for optical devices for fiber-optic communication. Furthermore, they may be used for the fabrication of uncooled mid and far infrared detectors. InAs/InP SAQDs were grown by low pressure-metalorganic chemical vapor deposition, where As/P exchange reaction and growth interruption step play an important role. The InAs quantum dot (QD) stacks were successfully grown on (001) InP substrate and their optical properties were characterized. Far-infrared absorption peaks were observed at 819 cm-1 (12.20 μm) and 518 cm-1 (19.35 μm) at room temperature by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Raman analysis showed that the peak at 819 cm-1 was attributed to a plasmon related peak in the n-type InP substrate. On the other hand, the absorption peak at 518 cm-1 was regarded as a peak related with intersubband transition in the InAs QDs, suggesting that room temperature operating quantum dot infrared photodetectors (QDIPs) can be fabricated. In situ monitoring of the QD evolution and stacking sequences were also discussed.

KW - Absorption

KW - FTIR

KW - InAs

KW - InP

KW - Quantum dots

KW - Raman

KW - Spectral reflectance

KW - Surface photoabsorption

KW - VSQD

UR - http://www.scopus.com/inward/record.url?scp=0141455286&partnerID=8YFLogxK

U2 - 10.1117/12.482480

DO - 10.1117/12.482480

M3 - Conference article

AN - SCOPUS:0141455286

SN - 0277-786X

VL - 4999

SP - 229

EP - 237

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Quantum Sensing: Evolution and Revolution from Past to Future

Y2 - 27 January 2003 through 30 January 2003

ER -

Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this