Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process

Chang Seok Lee; Je Hwang Ryu; Han Eol Im; Sellaperumal Manivannan; Didier Pribat; Jin Jang; Kyu Chang Park

doi:10.1007/978-3-540-85190-5_26

Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process

Chang Seok Lee, Je Hwang Ryu, Han Eol Im, Sellaperumal Manivannan, Didier Pribat, Jin Jang, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The CNTs were synthesized with various growth durations from 10min to 120min by dc-plsam enhanced chemical vapor deposition (dc-PECVD). The mixture of C₂H₂/NH₃ and H₂ gases was used for CNT growth. As the growth time is increase, the CNTs show the tendency gathering into the center of catalyst pattern due to the van der waals interaction between the CNTs and bonding to each other. In the 80 min growth, the CNTs show that the ~ 1μm thick diamter and up to 35μm length. We investiged these CNTs by the scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (TEM-EDS) and Raman. The bonded CNTs was covered by silicon comes from the silicon substrate and nitrogen was incoporated by hiding of catalyst metals. We obtained ratio of N/C and Si/C is ranged 0.25 ~ 0.55, 0.74 ~ 1.19 respectively.

Original language	English
Title of host publication	EKC 2008 - Proceedings of the EU-Korea Conference on Science and Technology
Editors	Seung-Deog Yoo
Publisher	Springer Science and Business Media, LLC
Pages	249-257
Number of pages	9
ISBN (Print)	9783540851899
DOIs	https://doi.org/10.1007/978-3-540-85190-5_26
Publication status	Published - 2008
Event	1st EU-Korea Conference on Science and Technology, EKC 2008 - Heidelberg, Germany Duration: 28 Aug 2008 → 31 Aug 2008

Publication series

Name	Springer Proceedings in Physics
Volume	124
ISSN (Print)	0930-8989
ISSN (Electronic)	1867-4941

Conference

Conference	1st EU-Korea Conference on Science and Technology, EKC 2008
Country/Territory	Germany
City	Heidelberg
Period	28/08/08 → 31/08/08

Bibliographical note

Publisher Copyright:
© Springer-Verlag Berlin Heidelberg 2008.

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10.1007/978-3-540-85190-5_26

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Lee, C. S., Ryu, J. H., Im, H. E., Manivannan, S., Pribat, D., Jang, J., & Park, K. C. (2008). Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process. In S.-D. Yoo (Ed.), EKC 2008 - Proceedings of the EU-Korea Conference on Science and Technology (pp. 249-257). (Springer Proceedings in Physics; Vol. 124). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-540-85190-5_26

@inproceedings{8c510204c3284edfbe4d6952dc803740,

title = "Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process",

abstract = "The CNTs were synthesized with various growth durations from 10min to 120min by dc-plsam enhanced chemical vapor deposition (dc-PECVD). The mixture of C2H2/NH3 and H2 gases was used for CNT growth. As the growth time is increase, the CNTs show the tendency gathering into the center of catalyst pattern due to the van der waals interaction between the CNTs and bonding to each other. In the 80 min growth, the CNTs show that the ~ 1μm thick diamter and up to 35μm length. We investiged these CNTs by the scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (TEM-EDS) and Raman. The bonded CNTs was covered by silicon comes from the silicon substrate and nitrogen was incoporated by hiding of catalyst metals. We obtained ratio of N/C and Si/C is ranged 0.25 ~ 0.55, 0.74 ~ 1.19 respectively.",

author = "Lee, {Chang Seok} and Ryu, {Je Hwang} and Im, {Han Eol} and Sellaperumal Manivannan and Didier Pribat and Jin Jang and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} Springer-Verlag Berlin Heidelberg 2008.; 1st EU-Korea Conference on Science and Technology, EKC 2008 ; Conference date: 28-08-2008 Through 31-08-2008",

year = "2008",

doi = "10.1007/978-3-540-85190-5_26",

language = "English",

isbn = "9783540851899",

series = "Springer Proceedings in Physics",

publisher = "Springer Science and Business Media, LLC",

pages = "249--257",

editor = "Seung-Deog Yoo",

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}

Lee, CS, Ryu, JH, Im, HE, Manivannan, S, Pribat, D, Jang, J & Park, KC 2008, Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process. in S-D Yoo (ed.), EKC 2008 - Proceedings of the EU-Korea Conference on Science and Technology. Springer Proceedings in Physics, vol. 124, Springer Science and Business Media, LLC, pp. 249-257, 1st EU-Korea Conference on Science and Technology, EKC 2008, Heidelberg, Germany, 28/08/08. https://doi.org/10.1007/978-3-540-85190-5_26

Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process. / Lee, Chang Seok; Ryu, Je Hwang; Im, Han Eol et al.
EKC 2008 - Proceedings of the EU-Korea Conference on Science and Technology. ed. / Seung-Deog Yoo. Springer Science and Business Media, LLC, 2008. p. 249-257 (Springer Proceedings in Physics; Vol. 124).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process

AU - Lee, Chang Seok

AU - Ryu, Je Hwang

AU - Im, Han Eol

AU - Manivannan, Sellaperumal

AU - Pribat, Didier

AU - Jang, Jin

AU - Park, Kyu Chang

PY - 2008

Y1 - 2008

N2 - The CNTs were synthesized with various growth durations from 10min to 120min by dc-plsam enhanced chemical vapor deposition (dc-PECVD). The mixture of C2H2/NH3 and H2 gases was used for CNT growth. As the growth time is increase, the CNTs show the tendency gathering into the center of catalyst pattern due to the van der waals interaction between the CNTs and bonding to each other. In the 80 min growth, the CNTs show that the ~ 1μm thick diamter and up to 35μm length. We investiged these CNTs by the scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (TEM-EDS) and Raman. The bonded CNTs was covered by silicon comes from the silicon substrate and nitrogen was incoporated by hiding of catalyst metals. We obtained ratio of N/C and Si/C is ranged 0.25 ~ 0.55, 0.74 ~ 1.19 respectively.

AB - The CNTs were synthesized with various growth durations from 10min to 120min by dc-plsam enhanced chemical vapor deposition (dc-PECVD). The mixture of C2H2/NH3 and H2 gases was used for CNT growth. As the growth time is increase, the CNTs show the tendency gathering into the center of catalyst pattern due to the van der waals interaction between the CNTs and bonding to each other. In the 80 min growth, the CNTs show that the ~ 1μm thick diamter and up to 35μm length. We investiged these CNTs by the scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (TEM-EDS) and Raman. The bonded CNTs was covered by silicon comes from the silicon substrate and nitrogen was incoporated by hiding of catalyst metals. We obtained ratio of N/C and Si/C is ranged 0.25 ~ 0.55, 0.74 ~ 1.19 respectively.

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T3 - Springer Proceedings in Physics

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EP - 257

BT - EKC 2008 - Proceedings of the EU-Korea Conference on Science and Technology

A2 - Yoo, Seung-Deog

PB - Springer Science and Business Media, LLC

T2 - 1st EU-Korea Conference on Science and Technology, EKC 2008

Y2 - 28 August 2008 through 31 August 2008

ER -

Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process

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