Growth of high electron emission CNTs for high resolution X-ray source

An Na Ha; Su Woong Lee; Eun Hye Lee; Woo Mi Bae; Hee Chul Woo; Young Ju Eom; Jang Jin; K. C. Park

Growth of high electron emission CNTs for high resolution X-ray source

An Na Ha, Su Woong Lee, Eun Hye Lee, Woo Mi Bae, Hee Chul Woo, Young Ju Eom, Jang Jin, K. C. Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The high electron emission property of carbon nanotube (CNT) emitter grown is studied. CNT emitters were grown on silicon wafer by the resist-assisted patterning (RAP) process. The electron emission current of grown CNT emitter shows high current more than 30mA and repeatable properties in 100 times measurement. Through structural and electrical analysis, we discuss about the property of grown emitters.

Original language	English
Title of host publication	Proceedings - IVNC 2011
Subtitle of host publication	2011 24th International Vacuum Nanoelectronics Conference
Pages	155-156
Number of pages	2
Publication status	Published - 2011
Event	2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Germany Duration: 18 Jul 2011 → 22 Jul 2011

Publication series

Name	Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

Conference

Conference	2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
Country/Territory	Germany
City	Wuppertal
Period	18/07/11 → 22/07/11

Keywords

CNT
High electron emission
X-ray source

Cite this

Ha, A. N., Lee, S. W., Lee, E. H., Bae, W. M., Woo, H. C., Eom, Y. J., Jin, J., & Park, K. C. (2011). Growth of high electron emission CNTs for high resolution X-ray source. In Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference (pp. 155-156). Article 6004609 (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).

@inproceedings{215819e84c704fadb2f3bc74d7c33cc6,

title = "Growth of high electron emission CNTs for high resolution X-ray source",

abstract = "The high electron emission property of carbon nanotube (CNT) emitter grown is studied. CNT emitters were grown on silicon wafer by the resist-assisted patterning (RAP) process. The electron emission current of grown CNT emitter shows high current more than 30mA and repeatable properties in 100 times measurement. Through structural and electrical analysis, we discuss about the property of grown emitters.",

keywords = "CNT, High electron emission, X-ray source",

author = "Ha, {An Na} and Lee, {Su Woong} and Lee, {Eun Hye} and Bae, {Woo Mi} and Woo, {Hee Chul} and Eom, {Young Ju} and Jang Jin and Park, {K. C.}",

year = "2011",

language = "English",

isbn = "9783000350818",

series = "Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference",

pages = "155--156",

booktitle = "Proceedings - IVNC 2011",

}

Ha, AN, Lee, SW, Lee, EH, Bae, WM, Woo, HC, Eom, YJ, Jin, J & Park, KC 2011, Growth of high electron emission CNTs for high resolution X-ray source. in Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference., 6004609, Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference, pp. 155-156, 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011, Wuppertal, Germany, 18/07/11.

Growth of high electron emission CNTs for high resolution X-ray source. / Ha, An Na; Lee, Su Woong; Lee, Eun Hye et al.
Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference. 2011. p. 155-156 6004609 (Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth of high electron emission CNTs for high resolution X-ray source

AU - Ha, An Na

AU - Lee, Su Woong

AU - Lee, Eun Hye

AU - Bae, Woo Mi

AU - Woo, Hee Chul

AU - Eom, Young Ju

AU - Jin, Jang

AU - Park, K. C.

PY - 2011

Y1 - 2011

N2 - The high electron emission property of carbon nanotube (CNT) emitter grown is studied. CNT emitters were grown on silicon wafer by the resist-assisted patterning (RAP) process. The electron emission current of grown CNT emitter shows high current more than 30mA and repeatable properties in 100 times measurement. Through structural and electrical analysis, we discuss about the property of grown emitters.

AB - The high electron emission property of carbon nanotube (CNT) emitter grown is studied. CNT emitters were grown on silicon wafer by the resist-assisted patterning (RAP) process. The electron emission current of grown CNT emitter shows high current more than 30mA and repeatable properties in 100 times measurement. Through structural and electrical analysis, we discuss about the property of grown emitters.

KW - CNT

KW - High electron emission

KW - X-ray source

UR - http://www.scopus.com/inward/record.url?scp=80052889258&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:80052889258

SN - 9783000350818

T3 - Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

SP - 155

EP - 156

BT - Proceedings - IVNC 2011

T2 - 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011

Y2 - 18 July 2011 through 22 July 2011

ER -

Growth of high electron emission CNTs for high resolution X-ray source

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Publication series

Conference

Keywords

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