@inproceedings{fbb40952a9bf4f83909f690ffc04b251,
title = "Growth of polycrystalline silicon films at low temperature by remote plasma CVD",
abstract = "We studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100 W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330 °C.",
author = "Kim, {Sung Chul} and Pak, {Kyu Chang} and Kim, {Sung Ki} and Jun, {Jung Mok} and Jin Jang",
note = "Copyright: Copyright 2004 Elsevier B.V., All rights reserved.; Proceedings of the Second Symposium on Dynamics in Small Confining Systems ; Conference date: 30-11-1992 Through 04-12-1992",
year = "1993",
language = "English",
isbn = "1558991786",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "635--640",
booktitle = "Materials Research Society Symposium Proceedings",
}