Growth of self-standing GaN substrates

Hyun Jae Lee; Katsushi Fujii; Takenari Goto; Chinkyo Kim; Jiho Chang; Soon Ku Hong; Meoungwhan Cho; Takafumi Yao

doi:10.1117/12.836337

Growth of self-standing GaN substrates

Hyun Jae Lee, Katsushi Fujii, Takenari Goto, Chinkyo Kim, Jiho Chang, Soon Ku Hong, Meoungwhan Cho, Takafumi Yao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices V
DOIs	https://doi.org/10.1117/12.836337
Publication status	Published - 2010
Event	Gallium Nitride Materials and Devices V - San Francisco, CA, United States Duration: 25 Jan 2010 → 28 Jan 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7602
ISSN (Print)	0277-786X

Conference

Conference	Gallium Nitride Materials and Devices V
Country/Territory	United States
City	San Francisco, CA
Period	25/01/10 → 28/01/10

Keywords

Evaporable buffer layer
GaN substrate
HVPE
Self-separation

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10.1117/12.836337

Cite this

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title = "Growth of self-standing GaN substrates",

abstract = "Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.",

keywords = "Evaporable buffer layer, GaN substrate, HVPE, Self-separation",

author = "Lee, {Hyun Jae} and Katsushi Fujii and Takenari Goto and Chinkyo Kim and Jiho Chang and Hong, {Soon Ku} and Meoungwhan Cho and Takafumi Yao",

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Lee, HJ, Fujii, K, Goto, T, Kim, C, Chang, J, Hong, SK, Cho, M & Yao, T 2010, Growth of self-standing GaN substrates. in Gallium Nitride Materials and Devices V., 760202, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7602, Gallium Nitride Materials and Devices V, San Francisco, CA, United States, 25/01/10. https://doi.org/10.1117/12.836337

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AU - Lee, Hyun Jae

AU - Fujii, Katsushi

AU - Goto, Takenari

AU - Kim, Chinkyo

AU - Chang, Jiho

AU - Hong, Soon Ku

AU - Cho, Meoungwhan

AU - Yao, Takafumi

PY - 2010

Y1 - 2010

N2 - Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.

AB - Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.

KW - Evaporable buffer layer

KW - GaN substrate

KW - HVPE

KW - Self-separation

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M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices V

T2 - Gallium Nitride Materials and Devices V

Y2 - 25 January 2010 through 28 January 2010

ER -

Growth of self-standing GaN substrates

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