TY - JOUR
T1 - Heteroepitaxial growth of MgO thin films on Al2O 3(0001) by metalorganic chemical vapor deposition
AU - Park, Won
AU - Kim, Dong Hyuk
AU - Gyu-Chul, Y. I.
AU - Kim, Chinkyo
PY - 2002/11
Y1 - 2002/11
N2 - MgO thin films were epitaxially grown on Al2O3(0001) substrates using metalorganic chemical vapor deposition. For film growth, bis-cyclopentadienyl-Mg and oxygen were employed as reactants. X-ray diffraction (XRD) θ-2θ scan and θ-rocking curve data showed a preferred film orientation of [111] direction along Al2O3[0001]. The XRD rocking curve of films grown at 600°C showed a full width at half maximum as narrow as 0.45°, indicating good crystallinity. The pole figures of MgO thin films, which show clearly six poles with 60° of rotational symmetry, imply that the MgO films were epitaxially grown with either 60° twins or inversion domains. Based on the pole figure and azimuthal scan measurements, the epitaxial relationship of MgO(111)//Al2O 3(0001) and MgO[110]//Al2O3[1010] was determined. More importantly, the vertical alignment and surface morphology of the thin films were significantly improved by doping Zn during MgO film growth.
AB - MgO thin films were epitaxially grown on Al2O3(0001) substrates using metalorganic chemical vapor deposition. For film growth, bis-cyclopentadienyl-Mg and oxygen were employed as reactants. X-ray diffraction (XRD) θ-2θ scan and θ-rocking curve data showed a preferred film orientation of [111] direction along Al2O3[0001]. The XRD rocking curve of films grown at 600°C showed a full width at half maximum as narrow as 0.45°, indicating good crystallinity. The pole figures of MgO thin films, which show clearly six poles with 60° of rotational symmetry, imply that the MgO films were epitaxially grown with either 60° twins or inversion domains. Based on the pole figure and azimuthal scan measurements, the epitaxial relationship of MgO(111)//Al2O 3(0001) and MgO[110]//Al2O3[1010] was determined. More importantly, the vertical alignment and surface morphology of the thin films were significantly improved by doping Zn during MgO film growth.
KW - Alo(0001) substrates
KW - Epitaxial growth
KW - Magnesium oxide (mgo)
KW - Metalorganic chemical vapor deposition (mocvd)
UR - http://www.scopus.com/inward/record.url?scp=32444449912&partnerID=8YFLogxK
U2 - 10.1143/JJAP.41.6919
DO - 10.1143/JJAP.41.6919
M3 - Article
AN - SCOPUS:32444449912
SN - 0021-4922
VL - 41
SP - 6919
EP - 6921
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 11 B
ER -