Abstract
We report high efficiency and long lifetime indium phosphide-based inverted red quantum dot light-emitting diode (QLED). Our optimized QLED with sol-gel processed electron transport layer (ZnMgO) and new organic hole transport layers with deep HOMO and high mobility exhibited a maximum external quantum efficiency of ~18% and operational lifetime (T50) of 650 hours at the initial brightness of 1000 cd/m2.
Original language | English |
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Pages (from-to) | 750-753 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 51 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2020 |
Event | 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online Duration: 3 Aug 2020 → 7 Aug 2020 |
Bibliographical note
Publisher Copyright:© 2020 SID.
Keywords
- High efficiency
- Inverted structure
- Long lifetime
- Quantum dot light-emitting diodes