High efficiency and long lifetime inp-based red quantum dot light-emitting diodes

Raju Lampande, Dong Hyun Shin, Mude Nagarjuna Naik, Ji Eun Yeom, Jang Hyuk Kwon

Research output: Contribution to journalConference articlepeer-review

Abstract

We report high efficiency and long lifetime indium phosphide-based inverted red quantum dot light-emitting diode (QLED). Our optimized QLED with sol-gel processed electron transport layer (ZnMgO) and new organic hole transport layers with deep HOMO and high mobility exhibited a maximum external quantum efficiency of ~18% and operational lifetime (T50) of 650 hours at the initial brightness of 1000 cd/m2.

Original languageEnglish
Pages (from-to)750-753
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume51
Issue number1
DOIs
Publication statusPublished - 2020
Event57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online
Duration: 3 Aug 20207 Aug 2020

Bibliographical note

Publisher Copyright:
© 2020 SID.

Keywords

  • High efficiency
  • Inverted structure
  • Long lifetime
  • Quantum dot light-emitting diodes

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