Abstract
We report a high efficiency inverted red indium phosphide (InP) based quantum dot-light emitting diode (QD-LED) by optimizing InP-QD properties as well as interfacial contact between electron transport layer and emissive QDs, and applying self-aging approach. Our QD-LED exhibits substantial improvement in the external quantum efficiency from 4.42 to 10.2% after several days of self-aging.
| Original language | English |
|---|---|
| Title of host publication | 26th International Display Workshops, IDW 2019 |
| Publisher | International Display Workshops |
| Pages | 1459-1461 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781713806301 |
| Publication status | Published - 2019 |
| Event | 26th International Display Workshops, IDW 2019 - Sapporo, Japan Duration: 27 Nov 2019 → 29 Nov 2019 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 3 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 26th International Display Workshops, IDW 2019 |
|---|---|
| Country/Territory | Japan |
| City | Sapporo |
| Period | 27/11/19 → 29/11/19 |
Bibliographical note
Publisher Copyright:© 2019 ITE and SID
Keywords
- Aging
- Cadmium-free QDs
- High efficiency
- Inverted QD-LED