High Efficiency Inverted Quantum-dot LED

Hyo Min Kim, Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper reviews the performances of high efficiency quantum-dot light emitting diodes (QLEDs) for displays, such as external quantum efficiency (EQE), current efficiency (CE) and power efficiency (PE). The device structures and materials for hole and electron transport layers are also discussed. Especially, we have developed a new electron transport layer (ETL) of doped ZnO material. Using the ETL we have developed the inverted red (R-), green (G-) and blue (B-) QLEDs exhibiting the maximum current efficiencies of 20.3, 79.2 and 0.4 cd/A, respectively.

Original languageEnglish
Title of host publicationAM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9784990875350
DOIs
Publication statusPublished - 15 Aug 2018
Event25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan
Duration: 3 Jul 20186 Jul 2018

Publication series

NameAM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
Country/TerritoryJapan
CityKyoto
Period3/07/186/07/18

Bibliographical note

Publisher Copyright:
© 2018 FTFMD.

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