High efficiency red and green Inp-quantum dot light-emitting diodes

Raju Lampande; Su Jeong Kim; Jang Hyuk Kwon

doi:10.1002/sdtp.15144

High efficiency red and green Inp-quantum dot light-emitting diodes

Raju Lampande, Su Jeong Kim, Jang Hyuk Kwon

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate high-efficiency red and green indium phosphide (InP) quantum dot light-emitting diodes (QLEDs) comprising low mobility electron transport layer and high mobility hole transport layer with deep HOMO level. Red and green InP-QLEDs show maximum external quantum efficiency of 21.8% and 13.5%, respectively, and high device stability.

Original language	English
Pages (from-to)	415-416
Number of pages	2
Journal	Digest of Technical Papers - SID International Symposium
Volume	52
Issue number	S2
DOIs	https://doi.org/10.1002/sdtp.15144
Publication status	Published - 2021
Event	International Conference on Display Technology, ICDT 2021 - Beijing, China Duration: 30 May 2021 → 2 Jun 2021

Bibliographical note

Publisher Copyright:
© 2021, John Wiley and Sons Inc. All rights reserved.

Keywords

Charge balance
High mobility hole transport layer
Inverted light emitting diode

Access to Document

10.1002/sdtp.15144

Cite this

@article{bc369925c2004fd7a8c88457aacf4921,

title = "High efficiency red and green Inp-quantum dot light-emitting diodes",

abstract = "We demonstrate high-efficiency red and green indium phosphide (InP) quantum dot light-emitting diodes (QLEDs) comprising low mobility electron transport layer and high mobility hole transport layer with deep HOMO level. Red and green InP-QLEDs show maximum external quantum efficiency of 21.8% and 13.5%, respectively, and high device stability.",

keywords = "Charge balance, High mobility hole transport layer, Inverted light emitting diode",

author = "Raju Lampande and Kim, {Su Jeong} and Kwon, {Jang Hyuk}",

note = "Publisher Copyright: {\textcopyright} 2021, John Wiley and Sons Inc. All rights reserved.; International Conference on Display Technology, ICDT 2021 ; Conference date: 30-05-2021 Through 02-06-2021",

year = "2021",

doi = "10.1002/sdtp.15144",

language = "English",

volume = "52",

pages = "415--416",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "S2",

}

TY - JOUR

T1 - High efficiency red and green Inp-quantum dot light-emitting diodes

AU - Lampande, Raju

AU - Kim, Su Jeong

AU - Kwon, Jang Hyuk

PY - 2021

Y1 - 2021

N2 - We demonstrate high-efficiency red and green indium phosphide (InP) quantum dot light-emitting diodes (QLEDs) comprising low mobility electron transport layer and high mobility hole transport layer with deep HOMO level. Red and green InP-QLEDs show maximum external quantum efficiency of 21.8% and 13.5%, respectively, and high device stability.

AB - We demonstrate high-efficiency red and green indium phosphide (InP) quantum dot light-emitting diodes (QLEDs) comprising low mobility electron transport layer and high mobility hole transport layer with deep HOMO level. Red and green InP-QLEDs show maximum external quantum efficiency of 21.8% and 13.5%, respectively, and high device stability.

KW - Charge balance

KW - High mobility hole transport layer

KW - Inverted light emitting diode

UR - http://www.scopus.com/inward/record.url?scp=85115881954&partnerID=8YFLogxK

U2 - 10.1002/sdtp.15144

DO - 10.1002/sdtp.15144

M3 - Conference article

AN - SCOPUS:85115881954

SN - 0097-966X

VL - 52

SP - 415

EP - 416

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S2

T2 - International Conference on Display Technology, ICDT 2021

Y2 - 30 May 2021 through 2 June 2021

ER -

High efficiency red and green Inp-quantum dot light-emitting diodes

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this