High-efficient ultraviolet emission in phonon-reduced ZnO films: The role of germanium

Sung Kim; Do Kyu Lee; Seung Hui Hong; Sung Hwan Eom; Hyoung Taek Oh; Suk Ho Choi; Han Na Hwang; Chan Cuk Hwang

doi:10.1063/1.2832759

High-efficient ultraviolet emission in phonon-reduced ZnO films: The role of germanium

Sung Kim, Do Kyu Lee, Seung Hui Hong, Sung Hwan Eom, Hyoung Taek Oh, Suk Ho Choi, Han Na Hwang, Chan Cuk Hwang

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Photoluminescence (PL) properties have been studied for Ge-doped ZnO films grown on Si wafers by RF-magnetron sputtering. A PL line, named as G line, appears at 3.324 eV by Ge doping and is attributed to Ge suboxide states including GeO color centers. As Ge concentration (nGe) increases, the intensities of free-exciton-, and neutral-donor-bound-exciton-, two-electron-satellite-, and G-PL lines increase, while those of their phonon replicas decrease. By Ge doping, no-phonon line deconvoluted from the near-band-edge (NBE) PL at 300 K is enhanced, but its LO phonon replicas are reduced, resulting in the enhancement of the NBE PL with its reduced bandwidth. It is suggested that these results are due to the increase of the Ge suboxide states with increasing nGe, which is also confirmed by the analysis of the Ge 3d core-level spectra by x-ray photoelectron spectroscopy.

Original language	English
Article number	023514
Journal	Journal of Applied Physics
Volume	103
Issue number	2
DOIs	https://doi.org/10.1063/1.2832759
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant (KRF-2007-521-C00094).

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title = "High-efficient ultraviolet emission in phonon-reduced ZnO films: The role of germanium",

abstract = "Photoluminescence (PL) properties have been studied for Ge-doped ZnO films grown on Si wafers by RF-magnetron sputtering. A PL line, named as G line, appears at 3.324 eV by Ge doping and is attributed to Ge suboxide states including GeO color centers. As Ge concentration (nGe) increases, the intensities of free-exciton-, and neutral-donor-bound-exciton-, two-electron-satellite-, and G-PL lines increase, while those of their phonon replicas decrease. By Ge doping, no-phonon line deconvoluted from the near-band-edge (NBE) PL at 300 K is enhanced, but its LO phonon replicas are reduced, resulting in the enhancement of the NBE PL with its reduced bandwidth. It is suggested that these results are due to the increase of the Ge suboxide states with increasing nGe, which is also confirmed by the analysis of the Ge 3d core-level spectra by x-ray photoelectron spectroscopy.",

author = "Sung Kim and Lee, {Do Kyu} and Hong, {Seung Hui} and Eom, {Sung Hwan} and Oh, {Hyoung Taek} and Choi, {Suk Ho} and Hwang, {Han Na} and Hwang, {Chan Cuk}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2007-521-C00094).",

year = "2008",

doi = "10.1063/1.2832759",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - High-efficient ultraviolet emission in phonon-reduced ZnO films

T2 - The role of germanium

AU - Kim, Sung

AU - Lee, Do Kyu

AU - Hong, Seung Hui

AU - Eom, Sung Hwan

AU - Oh, Hyoung Taek

AU - Choi, Suk Ho

AU - Hwang, Han Na

AU - Hwang, Chan Cuk

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2007-521-C00094).

PY - 2008

Y1 - 2008

N2 - Photoluminescence (PL) properties have been studied for Ge-doped ZnO films grown on Si wafers by RF-magnetron sputtering. A PL line, named as G line, appears at 3.324 eV by Ge doping and is attributed to Ge suboxide states including GeO color centers. As Ge concentration (nGe) increases, the intensities of free-exciton-, and neutral-donor-bound-exciton-, two-electron-satellite-, and G-PL lines increase, while those of their phonon replicas decrease. By Ge doping, no-phonon line deconvoluted from the near-band-edge (NBE) PL at 300 K is enhanced, but its LO phonon replicas are reduced, resulting in the enhancement of the NBE PL with its reduced bandwidth. It is suggested that these results are due to the increase of the Ge suboxide states with increasing nGe, which is also confirmed by the analysis of the Ge 3d core-level spectra by x-ray photoelectron spectroscopy.

AB - Photoluminescence (PL) properties have been studied for Ge-doped ZnO films grown on Si wafers by RF-magnetron sputtering. A PL line, named as G line, appears at 3.324 eV by Ge doping and is attributed to Ge suboxide states including GeO color centers. As Ge concentration (nGe) increases, the intensities of free-exciton-, and neutral-donor-bound-exciton-, two-electron-satellite-, and G-PL lines increase, while those of their phonon replicas decrease. By Ge doping, no-phonon line deconvoluted from the near-band-edge (NBE) PL at 300 K is enhanced, but its LO phonon replicas are reduced, resulting in the enhancement of the NBE PL with its reduced bandwidth. It is suggested that these results are due to the increase of the Ge suboxide states with increasing nGe, which is also confirmed by the analysis of the Ge 3d core-level spectra by x-ray photoelectron spectroscopy.

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DO - 10.1063/1.2832759

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VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023514

ER -

High-efficient ultraviolet emission in phonon-reduced ZnO films: The role of germanium

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