Abstract
We report the blue laser annealing (BLA) of a-Si and its application to TFT on glass. The grain size is larger than 3 urn which is much higher that of ELA poly-Si. A 150 nm BLA poly-Si TFT exhibits the field-effect of 126.57 cmVVs, subthreshold swing of 255 mV/decade and threshold voltage of-0.1 V. The TFT performance is very stable under the positive and negative bias stresses.
| Original language | English |
|---|---|
| Title of host publication | 24th International Display Workshops, IDW 2017 |
| Publisher | International Display Workshops |
| Pages | 453-455 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781510858992 |
| Publication status | Published - 2017 |
| Event | 24th International Display Workshops, IDW 2017 - Sendai, Japan Duration: 6 Dec 2017 → 8 Dec 2017 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 24th International Display Workshops, IDW 2017 |
|---|---|
| Country/Territory | Japan |
| City | Sendai |
| Period | 6/12/17 → 8/12/17 |
Bibliographical note
Publisher Copyright:© 2017 Proceedings of the International Display Workshops. All rights reserved.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
Keywords
- Blue laser annealing
- Crystallization
- High mobility
- Low temperature poly crystalline silicon (LTPS)
- TFT
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