High-Mobility Transparent SnO2 and ZnO-SnO2 thin-film transistors with SiO2/Al2O3 gate insulators

Woo Seok Cheong; Sung Min Yoon; Chi Sun Hwang; Hye Yong Chu

doi:10.1143/JJAP.48.04C090

High-Mobility Transparent SnO₂ and ZnO-SnO₂ thin-film transistors with SiO₂/Al₂O₃ gate insulators

Woo Seok Cheong
, Sung Min Yoon
, Chi Sun Hwang
, Hye Yong Chu

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Using a double-layered gate insulator [SiO₂ (100 nm)/Al ₂O₃ (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO₂ and ZnO-SnO ₂ (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O₂ ambient, the saturated mobility of SnO ₂ TTFT was 17.4cm² s^-1 V^-1, and that of ZTO TTFT was 50.4cm² s^-1 V^-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ̃10⁶.

Original language	English
Article number	04C090
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C090
Publication status	Published - Apr 2009

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@article{f468a5028e2f4e439c924b50ddcd625a,

title = "High-Mobility Transparent SnO2 and ZnO-SnO2 thin-film transistors with SiO2/Al2O3 gate insulators",

abstract = "Using a double-layered gate insulator [SiO2 (100 nm)/Al 2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO-SnO 2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO 2 TTFT was 17.4cm2 s-1 V-1, and that of ZTO TTFT was 50.4cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of{\~ }106.",

author = "Cheong, \{Woo Seok\} and Yoon, \{Sung Min\} and Hwang, \{Chi Sun\} and Chu, \{Hye Yong\}",

year = "2009",

month = apr,

doi = "10.1143/JJAP.48.04C090",

language = "English",

volume = "48",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "4 PART 2",

}

TY - JOUR

T1 - High-Mobility Transparent SnO2 and ZnO-SnO2 thin-film transistors with SiO2/Al2O3 gate insulators

AU - Cheong, Woo Seok

AU - Yoon, Sung Min

AU - Hwang, Chi Sun

AU - Chu, Hye Yong

PY - 2009/4

Y1 - 2009/4

N2 - Using a double-layered gate insulator [SiO2 (100 nm)/Al 2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO-SnO 2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO 2 TTFT was 17.4cm2 s-1 V-1, and that of ZTO TTFT was 50.4cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ̃106.

AB - Using a double-layered gate insulator [SiO2 (100 nm)/Al 2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO-SnO 2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO 2 TTFT was 17.4cm2 s-1 V-1, and that of ZTO TTFT was 50.4cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ̃106.

UR - https://www.scopus.com/pages/publications/77952473660

U2 - 10.1143/JJAP.48.04C090

DO - 10.1143/JJAP.48.04C090

M3 - Article

AN - SCOPUS:77952473660

SN - 0021-4922

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

M1 - 04C090

ER -

High-Mobility Transparent SnO₂ and ZnO-SnO₂ thin-film transistors with SiO₂/Al₂O₃ gate insulators

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