High performance AOS-based offset TFTs for kickback voltage reduction

Mallory Mativenga; Dong Han Kang; Young Sik Ahn; Jin Jang

High performance AOS-based offset TFTs for kickback voltage reduction

Mallory Mativenga, Dong Han Kang, Young Sik Ahn, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper shows that amorphous-oxide-semiconductor (AOS)-based thin-film transistors (TFTs) with drain- and/or source-offsets perform much better compared to Si-based offset TFTs in literature. Attributes of AOS-based offset TFTs include improved stability, high on-currents, independence of threshold-voltage from offset-length, and possibility for kickback-voltage reduction in active-matrix display applications.

Original language	English
Title of host publication	Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages	261-263
Number of pages	3
Publication status	Published - 2012
Event	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 4 Dec 2012 → 7 Dec 2012

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/Territory	Japan
City	Kyoto
Period	4/12/12 → 7/12/12

Keywords

Amorphous-indium-gallium-zinc-oxide (a-IGZO)
Display
Kickback voltage
Offset
Thin-film transistor (TFT)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "High performance AOS-based offset TFTs for kickback voltage reduction",

abstract = "This paper shows that amorphous-oxide-semiconductor (AOS)-based thin-film transistors (TFTs) with drain- and/or source-offsets perform much better compared to Si-based offset TFTs in literature. Attributes of AOS-based offset TFTs include improved stability, high on-currents, independence of threshold-voltage from offset-length, and possibility for kickback-voltage reduction in active-matrix display applications.",

keywords = "Amorphous-indium-gallium-zinc-oxide (a-IGZO), Display, Kickback voltage, Offset, Thin-film transistor (TFT)",

author = "Mallory Mativenga and Kang, {Dong Han} and Ahn, {Young Sik} and Jin Jang",

note = "Copyright: Copyright 2013 Elsevier B.V., All rights reserved.; 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

year = "2012",

language = "English",

isbn = "9781627486521",

series = "Proceedings of the International Display Workshops",

pages = "261--263",

booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

}

Mativenga, M, Kang, DH, Ahn, YS & Jang, J 2012, High performance AOS-based offset TFTs for kickback voltage reduction. in Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, vol. 1, pp. 261-263, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 4/12/12.

High performance AOS-based offset TFTs for kickback voltage reduction. / Mativenga, Mallory; Kang, Dong Han; Ahn, Young Sik et al.
Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 261-263 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Mativenga, Mallory

AU - Kang, Dong Han

AU - Ahn, Young Sik

AU - Jang, Jin

PY - 2012

Y1 - 2012

N2 - This paper shows that amorphous-oxide-semiconductor (AOS)-based thin-film transistors (TFTs) with drain- and/or source-offsets perform much better compared to Si-based offset TFTs in literature. Attributes of AOS-based offset TFTs include improved stability, high on-currents, independence of threshold-voltage from offset-length, and possibility for kickback-voltage reduction in active-matrix display applications.

AB - This paper shows that amorphous-oxide-semiconductor (AOS)-based thin-film transistors (TFTs) with drain- and/or source-offsets perform much better compared to Si-based offset TFTs in literature. Attributes of AOS-based offset TFTs include improved stability, high on-currents, independence of threshold-voltage from offset-length, and possibility for kickback-voltage reduction in active-matrix display applications.

KW - Amorphous-indium-gallium-zinc-oxide (a-IGZO)

KW - Display

KW - Kickback voltage

KW - Offset

KW - Thin-film transistor (TFT)

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M3 - Conference contribution

AN - SCOPUS:84885929093

SN - 9781627486521

T3 - Proceedings of the International Display Workshops

SP - 261

EP - 263

BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012

T2 - 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012

Y2 - 4 December 2012 through 7 December 2012

ER -

High performance AOS-based offset TFTs for kickback voltage reduction

Abstract

Publication series

Conference

Keywords

UN SDGs

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