High performance carbon nanotube electron beams with gate electrode optimization

Jung Su Kang; Kyu Chang Park

doi:10.1109/IVNC.2016.7551530

High performance carbon nanotube electron beams with gate electrode optimization

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The effect of gate mesh electrode on the electron extraction from carbon nanotube emitters for high performance electron beam were studied. In the case of low electron emission regime (< 1mA/cm²), gate electrode structure and materials little effects on electron emission current. However, higher electron emission regime (>1mA/cm²) gate electrode materials and structure start to effects on electron emission current and then it makes failure in electron beams. The effects were confirmed with DC-pulse driving with different duty cycle to reduce current load on gate mesh.

Original language	English
Title of host publication	2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509024193
DOIs	https://doi.org/10.1109/IVNC.2016.7551530
Publication status	Published - 24 Aug 2016
Event	29th International Vacuum Nanoelectronics Conference, IVNC 2016 - Vancouver, Canada Duration: 11 Jul 2016 → 15 Jul 2016

Publication series

Name	2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

Conference

Conference	29th International Vacuum Nanoelectronics Conference, IVNC 2016
Country/Territory	Canada
City	Vancouver
Period	11/07/16 → 15/07/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

CNTs
Electron beam
Field emission
Gate

Access to Document

10.1109/IVNC.2016.7551530

Cite this

Kang, J. S., & Park, K. C. (2016). High performance carbon nanotube electron beams with gate electrode optimization. In 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016 Article 7551530 (2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2016.7551530

@inproceedings{769bcec35b1648a3bc6308ba8656fb9d,

title = "High performance carbon nanotube electron beams with gate electrode optimization",

abstract = "The effect of gate mesh electrode on the electron extraction from carbon nanotube emitters for high performance electron beam were studied. In the case of low electron emission regime (< 1mA/cm2), gate electrode structure and materials little effects on electron emission current. However, higher electron emission regime (>1mA/cm2) gate electrode materials and structure start to effects on electron emission current and then it makes failure in electron beams. The effects were confirmed with DC-pulse driving with different duty cycle to reduce current load on gate mesh.",

keywords = "CNTs, Electron beam, Field emission, Gate",

author = "Kang, {Jung Su} and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th International Vacuum Nanoelectronics Conference, IVNC 2016 ; Conference date: 11-07-2016 Through 15-07-2016",

year = "2016",

month = aug,

day = "24",

doi = "10.1109/IVNC.2016.7551530",

language = "English",

series = "2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016",

address = "United States",

}

Kang, JS & Park, KC 2016, High performance carbon nanotube electron beams with gate electrode optimization. in 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016., 7551530, 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016, Institute of Electrical and Electronics Engineers Inc., 29th International Vacuum Nanoelectronics Conference, IVNC 2016, Vancouver, Canada, 11/07/16. https://doi.org/10.1109/IVNC.2016.7551530

High performance carbon nanotube electron beams with gate electrode optimization. / Kang, Jung Su; Park, Kyu Chang.
2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7551530 (2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance carbon nanotube electron beams with gate electrode optimization

AU - Kang, Jung Su

AU - Park, Kyu Chang

PY - 2016/8/24

Y1 - 2016/8/24

N2 - The effect of gate mesh electrode on the electron extraction from carbon nanotube emitters for high performance electron beam were studied. In the case of low electron emission regime (< 1mA/cm2), gate electrode structure and materials little effects on electron emission current. However, higher electron emission regime (>1mA/cm2) gate electrode materials and structure start to effects on electron emission current and then it makes failure in electron beams. The effects were confirmed with DC-pulse driving with different duty cycle to reduce current load on gate mesh.

AB - The effect of gate mesh electrode on the electron extraction from carbon nanotube emitters for high performance electron beam were studied. In the case of low electron emission regime (< 1mA/cm2), gate electrode structure and materials little effects on electron emission current. However, higher electron emission regime (>1mA/cm2) gate electrode materials and structure start to effects on electron emission current and then it makes failure in electron beams. The effects were confirmed with DC-pulse driving with different duty cycle to reduce current load on gate mesh.

KW - CNTs

KW - Electron beam

KW - Field emission

KW - Gate

UR - http://www.scopus.com/inward/record.url?scp=84988450718&partnerID=8YFLogxK

U2 - 10.1109/IVNC.2016.7551530

DO - 10.1109/IVNC.2016.7551530

M3 - Conference contribution

AN - SCOPUS:84988450718

T3 - 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

BT - 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 29th International Vacuum Nanoelectronics Conference, IVNC 2016

Y2 - 11 July 2016 through 15 July 2016

ER -

High performance carbon nanotube electron beams with gate electrode optimization

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this