High performance carbon nanotube emitters beam (C-beam) for display device application

Jung Su Kang; Su Woong Lee; Ha Rim Lee; Ji Han Hong; Shikili Callixte; Hee Tae Park; Won Jong Kim; Kyu Chang Park

doi:10.1109/IVNC.2014.6894788

High performance carbon nanotube emitters beam (C-beam) for display device application

Jung Su Kang, Su Woong Lee, Ha Rim Lee, Ji Han Hong, Shikili Callixte, Hee Tae Park, Won Jong Kim, Kyu Chang Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We introduced a carbon nanotube electron beam (C-beam) exposure technique for thin films for display devices. As an electron source, the CNT emitters were placed on cathode electrode. Electrons through gate mesh, with higher accelerated energy, impact thin film on the anode plate. For display device application, amorphous silicon (a-Si:H) thin films were deposited on glass substrate and then C-beams exposed. After moderated C-beam exposure, the silicon film changes to phase of crystalline one. The structural modification was confirmed with Raman spectrum and the enhanced electrical performances were measured with I-V systems. The silicon crystalline properties were strongly depending on the C-Beam exposure conditions.

Original language	English
Title of host publication	Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
Editors	Hans-Heinrich Braun, Oliver Groening, Martin Paraliev, Thomas Feurer, Soichiro Tsujino, Jens Gobrecht
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	134-135
Number of pages	2
ISBN (Electronic)	9781479953080
DOIs	https://doi.org/10.1109/IVNC.2014.6894788
Publication status	Published - 2014
Event	2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 - Engelberg, Switzerland Duration: 6 Jul 2014 → 10 Jul 2014

Publication series

Name	Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014

Conference

Conference	2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
Country/Territory	Switzerland
City	Engelberg
Period	6/07/14 → 10/07/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

CNT
Field emission
RAP
Triode
crystallization

Access to Document

10.1109/IVNC.2014.6894788

Cite this

Kang, J. S., Lee, S. W., Lee, H. R., Hong, J. H., Callixte, S., Park, H. T., Kim, W. J., & Park, K. C. (2014). High performance carbon nanotube emitters beam (C-beam) for display device application. In H.-H. Braun, O. Groening, M. Paraliev, T. Feurer, S. Tsujino, & J. Gobrecht (Eds.), Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 (pp. 134-135). Article 6894788 (Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2014.6894788

Kang, Jung Su ; Lee, Su Woong ; Lee, Ha Rim et al. / High performance carbon nanotube emitters beam (C-beam) for display device application. Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014. editor / Hans-Heinrich Braun ; Oliver Groening ; Martin Paraliev ; Thomas Feurer ; Soichiro Tsujino ; Jens Gobrecht. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 134-135 (Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014).

@inproceedings{8cea3580944f43f6a0191ad806224b7b,

title = "High performance carbon nanotube emitters beam (C-beam) for display device application",

abstract = "We introduced a carbon nanotube electron beam (C-beam) exposure technique for thin films for display devices. As an electron source, the CNT emitters were placed on cathode electrode. Electrons through gate mesh, with higher accelerated energy, impact thin film on the anode plate. For display device application, amorphous silicon (a-Si:H) thin films were deposited on glass substrate and then C-beams exposed. After moderated C-beam exposure, the silicon film changes to phase of crystalline one. The structural modification was confirmed with Raman spectrum and the enhanced electrical performances were measured with I-V systems. The silicon crystalline properties were strongly depending on the C-Beam exposure conditions.",

keywords = "CNT, Field emission, RAP, Triode, crystallization",

author = "Kang, {Jung Su} and Lee, {Su Woong} and Lee, {Ha Rim} and Hong, {Ji Han} and Shikili Callixte and Park, {Hee Tae} and Kim, {Won Jong} and Park, {Kyu Chang}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 ; Conference date: 06-07-2014 Through 10-07-2014",

year = "2014",

doi = "10.1109/IVNC.2014.6894788",

language = "English",

series = "Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "134--135",

editor = "Hans-Heinrich Braun and Oliver Groening and Martin Paraliev and Thomas Feurer and Soichiro Tsujino and Jens Gobrecht",

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}

Kang, JS, Lee, SW, Lee, HR, Hong, JH, Callixte, S, Park, HT, Kim, WJ & Park, KC 2014, High performance carbon nanotube emitters beam (C-beam) for display device application. in H-H Braun, O Groening, M Paraliev, T Feurer, S Tsujino & J Gobrecht (eds), Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014., 6894788, Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 134-135, 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014, Engelberg, Switzerland, 6/07/14. https://doi.org/10.1109/IVNC.2014.6894788

High performance carbon nanotube emitters beam (C-beam) for display device application. / Kang, Jung Su; Lee, Su Woong; Lee, Ha Rim et al.
Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014. ed. / Hans-Heinrich Braun; Oliver Groening; Martin Paraliev; Thomas Feurer; Soichiro Tsujino; Jens Gobrecht. Institute of Electrical and Electronics Engineers Inc., 2014. p. 134-135 6894788 (Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High performance carbon nanotube emitters beam (C-beam) for display device application

AU - Kang, Jung Su

AU - Lee, Su Woong

AU - Lee, Ha Rim

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AU - Callixte, Shikili

AU - Park, Hee Tae

AU - Kim, Won Jong

AU - Park, Kyu Chang

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N2 - We introduced a carbon nanotube electron beam (C-beam) exposure technique for thin films for display devices. As an electron source, the CNT emitters were placed on cathode electrode. Electrons through gate mesh, with higher accelerated energy, impact thin film on the anode plate. For display device application, amorphous silicon (a-Si:H) thin films were deposited on glass substrate and then C-beams exposed. After moderated C-beam exposure, the silicon film changes to phase of crystalline one. The structural modification was confirmed with Raman spectrum and the enhanced electrical performances were measured with I-V systems. The silicon crystalline properties were strongly depending on the C-Beam exposure conditions.

AB - We introduced a carbon nanotube electron beam (C-beam) exposure technique for thin films for display devices. As an electron source, the CNT emitters were placed on cathode electrode. Electrons through gate mesh, with higher accelerated energy, impact thin film on the anode plate. For display device application, amorphous silicon (a-Si:H) thin films were deposited on glass substrate and then C-beams exposed. After moderated C-beam exposure, the silicon film changes to phase of crystalline one. The structural modification was confirmed with Raman spectrum and the enhanced electrical performances were measured with I-V systems. The silicon crystalline properties were strongly depending on the C-Beam exposure conditions.

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BT - Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014

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A2 - Tsujino, Soichiro

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ER -

Kang JS, Lee SW, Lee HR, Hong JH, Callixte S, Park HT et al. High performance carbon nanotube emitters beam (C-beam) for display device application. In Braun HH, Groening O, Paraliev M, Feurer T, Tsujino S, Gobrecht J, editors, Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 134-135. 6894788. (Technical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014). doi: 10.1109/IVNC.2014.6894788

High performance carbon nanotube emitters beam (C-beam) for display device application

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Keywords

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