High-performance n-channel organic thin-film transistor for CMOS circuits using electron-donating self-assembled layer

Sung Hoon Kim; Sun Hee Lee; Jin Jang

doi:10.1109/LED.2010.2052092

High-performance n-channel organic thin-film transistor for CMOS circuits using electron-donating self-assembled layer

Sung Hoon Kim
, Sun Hee Lee
, Jin Jang

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, _N′ bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN₂}). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm²/ (V̇s}), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm²/(V̇s) and threshold voltage of-1.1 V.

Original language	English
Article number	5512661
Pages (from-to)	1044-1046
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1109/LED.2010.2052092
Publication status	Published - Sept 2010

Bibliographical note

Funding Information:
Manuscript received May 11, 2010; accepted May 24, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the Ministry of Knowledge and Economy of the Korean Government. The review of this letter was arranged by Editor J. K. O. Sin.

Keywords

PDI-8CN
n-type
organic thin-film transistor (OTFT)
self-assembled monolayer (SAM)
solution process

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10.1109/LED.2010.2052092

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title = "High-performance n-channel organic thin-film transistor for CMOS circuits using electron-donating self-assembled layer",

abstract = "We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N′ bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2\}). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm2/ ({\.V}s\}), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm2/({\.V}s) and threshold voltage of-1.1 V.",

keywords = "PDI-8CN, n-type, organic thin-film transistor (OTFT), self-assembled monolayer (SAM), solution process",

author = "Kim, \{Sung Hoon\} and Lee, \{Sun Hee\} and Jin Jang",

note = "Funding Information: Manuscript received May 11, 2010; accepted May 24, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the Ministry of Knowledge and Economy of the Korean Government. The review of this letter was arranged by Editor J. K. O. Sin.",

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doi = "10.1109/LED.2010.2052092",

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AU - Kim, Sung Hoon

AU - Lee, Sun Hee

AU - Jang, Jin

N1 - Funding Information: Manuscript received May 11, 2010; accepted May 24, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the Ministry of Knowledge and Economy of the Korean Government. The review of this letter was arranged by Editor J. K. O. Sin.

PY - 2010/9

Y1 - 2010/9

N2 - We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N′ bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2}). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm2/ (V̇s}), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm2/(V̇s) and threshold voltage of-1.1 V.

AB - We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N′ bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2}). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm2/ (V̇s}), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm2/(V̇s) and threshold voltage of-1.1 V.

KW - PDI-8CN

KW - n-type

KW - organic thin-film transistor (OTFT)

KW - self-assembled monolayer (SAM)

KW - solution process

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DO - 10.1109/LED.2010.2052092

M3 - Article

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SN - 0741-3106

VL - 31

SP - 1044

EP - 1046

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 5512661

ER -

High-performance n-channel organic thin-film transistor for CMOS circuits using electron-donating self-assembled layer

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Keywords

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