High performance organic thin-film transistors with photopatterned gate dielectric

Sun Hee Lee; Dong Joon Choo; Seung Hoon Han; Jun Hee Kim; Young Rea Son; Jin Jang

doi:10.1063/1.2425012

High performance organic thin-film transistors with photopatterned gate dielectric

Sun Hee Lee
, Dong Joon Choo
, Seung Hoon Han
, Jun Hee Kim
, Young Rea Son
, Jin Jang

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The authors have fabricated high performance pentacene organic thin-film transistor (OTFT) using photopatternable poly(4-vinylphenol) gate dielectric on plastic substrate. The dielectric layer was composed of poly(vinylphenol), 1,2,4,5-tetraacetoxymethylbenzene, and 2,4-bis(trichloro methyl)-6-aryl-1,3,5- triazine. The 1,2,4,5-tetraacetoxymethylbenzene is a cross-linking material which is synthesized by a two-step reaction. The gate dielectric was patterned by spin coating and UV exposure. The OTFT with photopatterned gate dielectric exhibited a field-effect mobility of 1.23 cm2 V s and a threshold voltage of -6.5 V and an on/off current ratio of 107, so that the OTFT can be applied to make a high performance display.

Original language	English
Article number	033502
Journal	Applied Physics Letters
Volume	90
Issue number	3
DOIs	https://doi.org/10.1063/1.2425012
Publication status	Published - 2007

Bibliographical note

Funding Information:
This research was supported by a grant (F0004082-2006-22) from Information Display R&D Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Commerce, Industry, and Energy of the Korean government.

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10.1063/1.2425012

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title = "High performance organic thin-film transistors with photopatterned gate dielectric",

abstract = "The authors have fabricated high performance pentacene organic thin-film transistor (OTFT) using photopatternable poly(4-vinylphenol) gate dielectric on plastic substrate. The dielectric layer was composed of poly(vinylphenol), 1,2,4,5-tetraacetoxymethylbenzene, and 2,4-bis(trichloro methyl)-6-aryl-1,3,5- triazine. The 1,2,4,5-tetraacetoxymethylbenzene is a cross-linking material which is synthesized by a two-step reaction. The gate dielectric was patterned by spin coating and UV exposure. The OTFT with photopatterned gate dielectric exhibited a field-effect mobility of 1.23 cm2 V s and a threshold voltage of -6.5 V and an on/off current ratio of 107, so that the OTFT can be applied to make a high performance display.",

author = "Lee, \{Sun Hee\} and Choo, \{Dong Joon\} and Han, \{Seung Hoon\} and Kim, \{Jun Hee\} and Son, \{Young Rea\} and Jin Jang",

note = "Funding Information: This research was supported by a grant (F0004082-2006-22) from Information Display R\&D Center, one of the 21st Century Frontier R\&D Program funded by the Ministry of Commerce, Industry, and Energy of the Korean government.",

year = "2007",

doi = "10.1063/1.2425012",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - High performance organic thin-film transistors with photopatterned gate dielectric

AU - Lee, Sun Hee

AU - Choo, Dong Joon

AU - Han, Seung Hoon

AU - Kim, Jun Hee

AU - Son, Young Rea

AU - Jang, Jin

N1 - Funding Information: This research was supported by a grant (F0004082-2006-22) from Information Display R&D Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Commerce, Industry, and Energy of the Korean government.

PY - 2007

Y1 - 2007

N2 - The authors have fabricated high performance pentacene organic thin-film transistor (OTFT) using photopatternable poly(4-vinylphenol) gate dielectric on plastic substrate. The dielectric layer was composed of poly(vinylphenol), 1,2,4,5-tetraacetoxymethylbenzene, and 2,4-bis(trichloro methyl)-6-aryl-1,3,5- triazine. The 1,2,4,5-tetraacetoxymethylbenzene is a cross-linking material which is synthesized by a two-step reaction. The gate dielectric was patterned by spin coating and UV exposure. The OTFT with photopatterned gate dielectric exhibited a field-effect mobility of 1.23 cm2 V s and a threshold voltage of -6.5 V and an on/off current ratio of 107, so that the OTFT can be applied to make a high performance display.

AB - The authors have fabricated high performance pentacene organic thin-film transistor (OTFT) using photopatternable poly(4-vinylphenol) gate dielectric on plastic substrate. The dielectric layer was composed of poly(vinylphenol), 1,2,4,5-tetraacetoxymethylbenzene, and 2,4-bis(trichloro methyl)-6-aryl-1,3,5- triazine. The 1,2,4,5-tetraacetoxymethylbenzene is a cross-linking material which is synthesized by a two-step reaction. The gate dielectric was patterned by spin coating and UV exposure. The OTFT with photopatterned gate dielectric exhibited a field-effect mobility of 1.23 cm2 V s and a threshold voltage of -6.5 V and an on/off current ratio of 107, so that the OTFT can be applied to make a high performance display.

UR - https://www.scopus.com/pages/publications/33846455043

U2 - 10.1063/1.2425012

DO - 10.1063/1.2425012

M3 - Article

AN - SCOPUS:33846455043

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033502

ER -

High performance organic thin-film transistors with photopatterned gate dielectric

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