High-performance solution processed indium oxide thin films transistors

Christophe Avis, Youn Goo Kim, Hye Rim Hwang, Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have developed a high performance solution processed indium oxide TFT (InOx TFT). The spin-coated TFTs has saturation mobility, Vth, and gate swing of 57.3cm2/Vs, 0.4V, and 149mV/dec, respectively. Inverters based on InOx TFTs were fabricated and showed a gain∼27 at VDD=3V.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages345-346
Number of pages2
Publication statusPublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/TerritoryJapan
CityKyoto
Period4/12/127/12/12

Keywords

  • Indium oxide
  • Oxide TFT
  • Solution process
  • Unipolar inverters

Fingerprint

Dive into the research topics of 'High-performance solution processed indium oxide thin films transistors'. Together they form a unique fingerprint.

Cite this